Temperature Effect on the Performance of of n-Type uc -Si Film Grown by Linear Facing Target Sputtering for Thin Film Silicon Photovoltaic Devices

Abstract

In this work, the effect of temperature on performance of (Al+Ag)/n+- c –Si/ p-Si/Al thin Film Grown by Linear Facing Target Sputtering thin Film solar cells devices has been investigated. c n+-Si type is used as donor whereas p-type used as an acceptor. The optimised device has an efficiency of ~23.5% at room temperature. Investigations on the optimized device show that temperature has significant effect on the photovoltaic performance. Short circuit current density (Jsc) and fill factor (FF) increase whereas open circuit voltage (Voc) increases with reduction in temperature. The increasing in Jsc has been attributed to the temperature dependent electronic properties of the active c n+-Si layers while the increment in the Voc has been attributed to the reduction in band bending and increment in built in voltage (Vbi) on lowering of temperature. In overall the efficiency first increases and then decreases with reduction in temperature.