Bulk Recombination Lifetime of Minority Carrier in Compensated p-Si Solar Cell

Abstract

A numerical study has been carried out to extract bulk recombinations lifetime of minority carrier in Fe contaminated p-type compensated silicon solar cell. In this paper it has demonstrated that the compensation will lead to a substantial increase in both intrinsic and Shockley-Read-Hall (SRH) lifetime for minority carrier in p-Si. The utmost importance of this result is the control of compensation level that will facilitate strong improvements in silicon solar cell efficiencies.