Journals / Turkish Journal of Physics / 1998 / Cilt: 22 - Sayı: 3
The Effect of Halogen Impurities on Electrocunductivity of Chalcogenide Glass Semicunductor Se-As System
- Journal
- Turkish Journal of Physics
- Pages
- 263–266
- DOI
- —
Abstract
DC conductivity has been measured as function of dopant concentration for Se-As glass containing 2-10 % As, doped with Cl or Br. It was established that concentration dependences of the conductivity have maxima for concentration of Cl or Br between 10-3 and 10-2 at %. The effect of halogen impurities on electroconductivity of Se-As glasses has been attributed to the change of relative concentrations of the charged defect centers (C-1, C+3) and to the occurrence of new Cl-, Br- centers associated with chlorine (bromine) atoms and the compensation of the effect of arsenic on the energy spectrum of electron states.
Özet
DC conductivity has been measured as function of dopant concentration for Se-As glass containing 2-10 % As, doped with Cl or Br. It was established that concentration dependences of the conductivity have maxima for concentration of Cl or Br between 10-3 and 10-2 at %. The effect of halogen impurities on electroconductivity of Se-As glasses has been attributed to the change of relative concentrations of the charged defect centers (C-1, C+3) and to the occurrence of new Cl-, Br- centers associated with chlorine (bromine) atoms and the compensation of the effect of arsenic on the energy spectrum of electron states.