Journals / Turkish Journal of Physics / 1998 / Cilt: 22 - Sayı: 8

The Relation Between Dislocation Density and Crystal Crosscut in b-Sn Grown by Modified Bridgman Method

Pages
803–810
DOI
—

Abstract

Crystals b-Sn are grown from ingots of 99.99% purity by modified Bridgman method under 10-3 torr pressure and oriented by Laue back reflection method. The relation between crystal crosscut and dislocation density calculated using etch hillock technique is investigated. It is found that the dislocation density increases with increasing crystal crosscut.

Özet

Crystals b-Sn are grown from ingots of 99.99% purity by modified Bridgman method under 10-3 torr pressure and oriented by Laue back reflection method. The relation between crystal crosscut and dislocation density calculated using etch hillock technique is investigated. It is found that the dislocation density increases with increasing crystal crosscut.

Keywords: Turk. J. Phys., 22, (1998), 803-810. Full text: pdf Other articles published in the same issue: Turk. J. Phys., vol.22, iss.8.