Some physical properties of $gamma$ irradiated $Ge_x(As_2Te_3)_{100-x}$ chalcogenide system

Abstract

The effect of $gamma$ -radiation on the electrical conductivity, switching, and optical properties of the chalcogenide amorphous system $Ge_x(As_2Te_3)_{100-x}$ (where x = 0,1,5,10 atm %) have been studied. The results show that the radiation causes a shift of the optical gap,as well as a change in the electrical activation energy and the threshold voltage. As the $gamma$ -doses increase, the values of the allowed indirect optical energy gap $E_{opt}$ for the different compositions decreases and the tail energy width increases.