Fabrication and characterization of Si-PIN photodiodes

Abstract

In this work, characteristics of silicon-based p+ type, intrinsic (I), n− type (Si-PIN) photodiodes with activearea of 3.5 × 3.5 mm2 , 5.0 × 5.0 mm2 , or 7.0 × 7.0 mm2 and their possible usage in optoelectronics were studied. Thedevices were fabricated in the Radiation Detector Application and Research Center (NÜRDAM) of Bolu Abant İzzetBaysal University, Turkey. To acquire the device specifications, the current-voltage (I-V) and the capacitance-voltage(C-V) measurements were carried out in the photoconductive mode. Quantum efficiency and spectral responsivitymeasurements were performed in the photovoltaic mode. Both measurements were carried out in a dark environmentat room temperature. The measured values of the dark current (Idc) and the capacitance of photodiodes were –6.97 to–19.10 nA and 23 to 61 pF at –5 V, respectively. The quantum efficiency measurements of the devices increased up to66%. P responsivity was found to be 0.436 ± 1 mA/W at 820 nm. The results indicate that the Idc current and theperformance of the devices were improved. Therefore, the devices can be utilized for optoelectronics applications andcommercial usage.