Materials anddevices for integrated room temperature quantum spintronics

Abstract

: Recent advances in precise stoichiometry control and high-resolution characterization of advanced spintronicmaterials allowed for the development of integrated spintronic devices, which might enable ultralow power magnonicdevices with multi-THz spin wave bandwidth and topologically protected spin wavefunctions that are robust for fabrication imperfections. In addition, advances in microwave and optical excitation and control of quantum states in diamondnitrogen-vacancy systems (diamond-NV) allowed for ultrasensitive magnetometry and integrated quantum logic applications. Here, an integrated spintronic garnet/diamond-NV quantum system has been reviewed and discussed for logic andmemory applications. After an overview of the recent advances in the growth and characterization of insulating magneticiron garnets, previous computational demonstrations of ultrawide bandwidth topologically protected few-nanometer sizechiral spin structures called skyrmions are discussed for carrying information on chip between diamond-NV systems.Next, earlier diamond-NV characterization studies using microwave ferromagnetic resonance and photoluminescencemeasurements were reviewed. Finally, a brief discussion is presented on the steps needed for integrated quantum spintronic devices to operate at room temperature.