Low leakage pocket junction-less DGTFET with biosensing cavity region

Abstract

Low leakage current junction-less double gate tunnel field-effect transistor (JLDGTFET) with narrow bandgap material pocket region of Si0.7Ge0.3 shows increased band to band tunneling and sharp subthreshold characteristicsto meet low power, high speed digital and memory applications. The proposed JLDGTFET exploits the junction-lessbehavior that supports reasonable values of ON/OFF currents as well as improved subthreshold parameters. First, theperformance optimization of the JLDGTFET is carried out with different gate contact and oxide region materials interms of ION /IOF F current ratio, subthreshold slope, and drain induced barrier lowering. The ON/OFF performance ofthe pocket Si0.7Ge0.3 JLDGTFET with cavity region is also examined to enhance the sensing capability for biomoleculespresent in the atmosphere that affect the dielectric constant of air present in the cavity and hence overall performancechanges. The 2D/3D Visual TCAD tool is used to simulate novel thin body pocket Si0.7Ge0.3 JLDGTFET.