An analytical model to assess DC characteristics of independent gate Si FinFETs

Abstract

In this paper, Poisson’s equation is utilized to find the potential distribution inside the channel of anindependent gate FinFET device by adding the effect of channel height. The channel height of the device plays animportant role in surface potential calculation when top gate voltage is applied. Using surface potential, an I −V modelis developed, which can find the device current both in linear and saturation regions of operation. The model is tested ondevices of different dimensions and good agreement between modeled and simulated results is observed, which validatesthe authenticity of the proposed model.