Cryogenic DC Characteristics of Low Threshold Voltage (VTH) n-channel MOSFETs

Abstract

Cryogenic electronics has grown in its widespread use for various technological applications. Particularly, CMOS devices and circuits are more frequently used in such systems due to their dominance in the electronics industry. At cryogenic temperatures, characteristics of CMOS devices vary, which should be characterized with measurements. In this paper, the changes in the electronic behavior of a low threshold voltage (VTH) n-channel MOSFET (nMOSFET) are captured experimentally. The results are then compared with the measurements of a regular nMOSFET having the same channel width and length. It is shown that although the VTH increase of both transistors is at the same amount, this value corresponds to a more significant percentage of the nominal threshold voltage for the low VTH nMOSFET.