On radiation processes in silicon doped with rhodium and sulphur

Özet

The effect of Rh and S atom concentration influence on carriers removal rate in n &#8212; Si < B, S > and Si < P, Rh > under fast neutrons irradiation has been investigated. It was shown that the initial rate of carrier concentration removal decreases with increasing Rh concentration in n &#8212; Si < B,S > with increasing S atom's concentration. This anomaly is connected with the degree of conductivity homogeneity and the change in degree of compensation in n &#8212; Si < P, Rh > and n- Si < B,S >.