Photodetector of PtSi-Si basis with coding device

Özet

In this paper, PtSi-Si photodetector is described. Photodetector technology on the basis of PtSi-Si contact is developed. Electrophysical and photoelectric properties of these structures are investigated. For the high-speed processing of photodetector signal the new structure of parallel-serial type ADC is proposed. Time of conversion of the ADC are investigated.