Peculiarity of hole mobility in silicon compensated with sulphur

Özet

It has been observed that $\mu$ increases in n &#8212; Si < B, S > as the free carrier concentration in the conduction band (at ~ 300K)- together with the temperature in the 77-100 K region increases. Such anomalous behavior of $\mu$ is explained by the presence of a microinhomogeneities of high- resistance inclusion (n-regions) in the low resistance bulk ($n^+$ - regions), which form during the doping process of the silicon with sulphur ( S), and is independent of cooling rate in the interval 4-300 °C. $min^{-1}$.