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Journals / Turkish Journal of Physics / 1996 / Cilt: 20 - Sayı: 8

Technology and characterization of microwave power GaAs MESFET for space communication

Sh. S. KHALILOV,V. E. SIZOV,A. S. VEDENEEV,A. G. ZHDAN

Pages
966–969
DOI
—

Özet

A nondestructive diagnostic tool for microwave power GaAs NESFET for the space communication systems is presented. The parasitic effects and intrinsic characteristics of MESFETs at temperature range 77-300 K are investigated, and the main parameters of MESFET are determinated.