Journals / Turkish Journal of Physics / 1999 / Cilt: 23 - Sayı: 3
Ionizing Radiations and Annealing Influence on MOSFET Charge States
- Journal
- Turkish Journal of Physics
- Pages
- 485–491
- DOI
- —
Abstract
The threshold voltage shift D VT and its components due to trapped-oxide charges D VNot and Si-SiO2 interface traps D VN in MOSFET exposed to Bremsstrahlung, Co60 irradiation and annealing were studied. Several effects caused by differences in the photon energies from two types of sources are discussed as well as a mechanism of changing the trapped-oxide and Si-SiO2 interface traps by annealing. The mechanism is based on previously available models.
Özet
The threshold voltage shift D VT and its components due to trapped-oxide charges D VNot and Si-SiO2 interface traps D VN in MOSFET exposed to Bremsstrahlung, Co60 irradiation and annealing were studied. Several effects caused by differences in the photon energies from two types of sources are discussed as well as a mechanism of changing the trapped-oxide and Si-SiO2 interface traps by annealing. The mechanism is based on previously available models.