Feasibility of fabrication of heteroepitaxial $Ge_xSi_{1-X}/Si(111)$ structure by pulsed Nd: YAG laser

Özet

Heteroepitaxial $Ge_x Si_{1-x}$ alloy layers have been formed by 10 ms and 300 $\mu s$ laser pulse induced mixing of pure germanium films and Si(111) substrates where Ge films of thickness (500-1250) Å are thermally evaporated onto Si(111) under vacuum pressure $\sim 10^{-5}$ Torr. The near surface of the sample then undergoes rapid melting and regrowth processes during each pulse from a free running Nd; YAG laser. The alloy layers are (4.6-6.5) $\mu m$ thick and have a Ge fraction of x = 6-8.2%.