Acceptor levels of substitutional Zn, Cd and Hg impurity atoms in $Ge_{1-x}Si_ x$ crystals

Özet

Hall measurement has been carried out for a set of Zn,Cd and Hg -doped $Ge_{1-x} Si_ x$ crystals (0$\leq$ X $\leq$ 0, 3). It is shown that the substitutional Zns and Cds atoms in $Ge_{1-x} Si_ x$ and Si behave as double acceptor as in Ge. In silicon the Hgs atoms give rise to one deep acceptor center. The binding energies of the $Zn_s$, $Cd_s$ and $Hg_s$ acceptor states in $Ge_{1-x} Si_ x$ increase linearly with the silicon content. This result agrees qualitatively with the concept of a virtual crystal model. Random-alloy splitting of the $Zn_s$,$Cd_s$ and $Hg_s$ impurity levels in the crystals is iscussed.