Dielectric spectroscopy of GaSe single crystal

Özet

The Dielectric Spectroscopy (DS) of a p-GaSe signle crystal has been measured in the frequency range from $10^{-2}$ to $10^4$ Hz and over temperatures in the range 300 to 480K. A loss peak process at higher frequencies and a special conduction mechanism at lower frequencies as low term frequency dispersion (LFD) have been observed. The activation energies of the conduction for both $\parallel c$ and $\bot c$ are found to be same at 0.75 $\pm$ 0.03eV, which indicate thermally activated localized hopping of carriers. The anisotropy in the structural properties of GaSe, due to its layered structure, is not reflected in the DS measuremants.