Journals / Turkish Journal of Physics / 1998 / Cilt: 22 - Sayı: 6
The Determination of Thermal Annealing Effect on the DOS Profile of a-Si:H Film
- Journal
- Turkish Journal of Physics
- Pages
- 453–459
- DOI
- —
Abstract
In this study the aim was to investigate the effect of thermal annealing on the density of states (DOS) of hydrogenated amorphous silicon (a-Si:H) by means of a Schottky structure. In order to realize that goal the sandwich structured Au/a-Si:H/a-Si:H(n+-type)/Cr Schottky diode was fabricated. The junction capacitance of the samples were measured as a function of the amplitude of alternating voltage in the frequency range of 500 Hz - 100 KHz and in the annealing temperature range of 23 - 175oC. The density of states profile as a function of both annealing temperature and energy were plotted. The effect of the annealing on the density of states (DOS) is discussed.
Özet
In this study the aim was to investigate the effect of thermal annealing on the density of states (DOS) of hydrogenated amorphous silicon (a-Si:H) by means of a Schottky structure. In order to realize that goal the sandwich structured Au/a-Si:H/a-Si:H(n+-type)/Cr Schottky diode was fabricated. The junction capacitance of the samples were measured as a function of the amplitude of alternating voltage in the frequency range of 500 Hz - 100 KHz and in the annealing temperature range of 23 - 175oC. The density of states profile as a function of both annealing temperature and energy were plotted. The effect of the annealing on the density of states (DOS) is discussed.