Journals / Turkish Journal of Physics / 1999 / Cilt: 23 - Sayı: 6
Effect of Ionizing Radiation on the Silicon IMPATT Diode Characteristics
- Journal
- Turkish Journal of Physics
- Pages
- 985–988
- DOI
- —
Abstract
We investigated the effect of 60Co g-irradiation (doses from 102 to 2 \times 106 Gy), both without and with heat annealing, on silicon IMPATT diode parameters. It is shown that such treatments improve the diode characteristics (particularly decrease the reverse current and increase both the output and the diffusion length of the minority charge carriers) due to radiation-enhanced processes.
Özet
We investigated the effect of 60Co g-irradiation (doses from 102 to 2 \times 106 Gy), both without and with heat annealing, on silicon IMPATT diode parameters. It is shown that such treatments improve the diode characteristics (particularly decrease the reverse current and increase both the output and the diffusion length of the minority charge carriers) due to radiation-enhanced processes.