Journals / Turkish Journal of Physics / 2001 / Cilt: 25 - Sayı: 3
The Temperature Dependence of Dark Conductivity in Hydrogenated Amorphous SiNx Films
- Journal
- Turkish Journal of Physics
- Pages
- 223–227
- DOI
- —
Abstract
Thin film samples of hydrogenated amorphous silicon nitride with varying nitrogen content were prepared by conventional plasma deposition from a mixture of SiH4 and NH3 . The dark conductivity (sd) of the films have been measured in the temperature range 420 K - 100 K. The conductivity is thermally activated with a single activation energy down to 250 K and conduction is dominated by electrons in extended states. A strong decrease is observed sigma d when the nitrogen content is increased.
Özet
Thin film samples of hydrogenated amorphous silicon nitride with varying nitrogen content were prepared by conventional plasma deposition from a mixture of SiH4 and NH3 . The dark conductivity (sd) of the films have been measured in the temperature range 420 K - 100 K. The conductivity is thermally activated with a single activation energy down to 250 K and conduction is dominated by electrons in extended states. A strong decrease is observed sigma d when the nitrogen content is increased.