Journals / Turkish Journal of Physics / 2003 / Cilt: 27 - Sayı: 6

Physical Properties of Spray Pyrolysed CdS Thin Films

Pages
551–558
DOI
—

Abstract

Cadmium sulphide (CdS) thin films were prepared by chemical spray-pyrolysis technique. Cleaned glass substrates were used. The substrate temperature was varied in the range 200 -- 400 °C and seems to be one of the more important parameters affecting the physical properties of the semiconductor. The films were characterized by X-ray diffraction (XRD). XRD patterns indicated the presence of single-phase hexagonal CdS. The resistivity of the as-deposited films was found to vary in the range 103 - 105 W. Cm, depending on the substrate temperature. Direct band gap values of 2.39--2.42 eV were obtained from optical absorption measurements.

Özet

Cadmium sulphide (CdS) thin films were prepared by chemical spray-pyrolysis technique. Cleaned glass substrates were used. The substrate temperature was varied in the range 200 -- 400 °C and seems to be one of the more important parameters affecting the physical properties of the semiconductor. The films were characterized by X-ray diffraction (XRD). XRD patterns indicated the presence of single-phase hexagonal CdS. The resistivity of the as-deposited films was found to vary in the range 103 - 105 W. Cm, depending on the substrate temperature. Direct band gap values of 2.39--2.42 eV were obtained from optical absorption measurements.

Keywords: CdS thin films; Spray pyrolysis; Structural characteristics; Electrical and optical properties.