Characterization of $In_4Te_3$ single crystals

Özet

Single crystals of $In_4Te_3$ grown by modified Bridgman technique were characterized by measurement of the Hall coefficient, electrical conductivity and Seebeck coefficient, in the temperature range 200-500 K. The investigated sample was found to be of P-type conductivity.$R_H$ at room temperature was $3.1 x 10^{14} cm^3/coul$ and the carrier concentration was evaluated as $2.007 x 10^{14} cm^3$ Energy gap $\DeltaE_g$ and ionization energy $\DeltaE_a$ were estimated as 0.28 eV and 0.12 eV, respectively, and the diffusion coefficient., the diffusion length, the mean free time between collision and the effective mass of carriers were evaluated. The variation ol the Hall mobility with temperature was studied and hence the scattering mechanism is discussed.