Achieving carrier and photon con nement in Ga(NAsP)/AlGaP/GaP QWs on Sisubstrates

Abstract

A detailed comparative theoretical analysis on both carrier and photon con nement of dilute nitride directbandgap GaNxAs1xyPywith that of GaAs1yPyon Si substrates is presented. Model calculations indicate thatoptical con nement factor of GaAs1yPy/GaP is greater than that of GaNxAs1xyPy/GaP for all concentrations.We have demonstrated that one can improve the optical con nement factor of GaNxAs1xyPy/GaP by using anAlzGa1zP cladding layer.