Electrophysical properties of Pb 1−XMnX Se epitaxial films irradiated by γ -quanta

Özet

Herein, the effect of γ -quanta on electrophysical and photoelectric properties of p-type Pb1−x Mnx Seepitaxial films obtained from the molecular cluster on the glass substrate by the method of condensation has beeninvestigated. It has been established that the acceptor-type local levels with the ionization energy of 0.14 eV and 0.175eV are generated, when p-type Pb1−x Mnx Se (x = 0.01) epitaxial films are irradiated by γ -quanta at D >10 kGy doses.The increase in the photoconductivity in the low temperature range 80-180K is due to the discharge of 0.14eV level, butthe decrease in the rate of change of photocurrent in the high temperature range is due to the role of local level with0.175 eV energy as a recombination center.