Journals / Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi / 2019 / Cilt: 9 - Sayı: 4
The Investigation of Temperature Dependent Reverse Bias Capacitance-Voltage (C-V) Characteristics of Au/Ppy/N-Si (MPS) Type Schottky Barrier Diodes (Sbds) at 100 Khz and 500 Khz
- Pages
- 2062–2069
- DOI
- —
Abstract
Au/PPy/n-Si (MPS) type SBDs were fabricated and their electrical characteristics were investigated in the temperature range of 140-340 K at 100 and 500 kHz frequencies by using analyzed the C-V measurements. The C-V plots have inversion, depletion and accumulation regions for each temperature. The value of C increases with increasing temperature almost as exponentially in inversion and depletion regions. The reverse bias C-2 vs V plots show a linear behavior in the wide range bias voltage and so the values of doping atoms (ND), Fermi energy (EF), diffusion potential (Vd), and barrier height (B(C-V)) were obtained from intercepts and slopes of these plots for each temperature and frequency. While the EF increases with increasing temperature, B decreases as linearly. The l values of B(C-V) range from 0.703 eV at 140 K to 0.161 eV at 340 K for 100 kHz and 0.810 eV at 140 K to 0.391 eV at 340 K for 500 kHz, respectively. The electrical conductivity (ac) increases as exponential with temperature. The activation energy (Ea) values were found as 30.8 meV from the slope Ln(ac)-q/kT plot. These results implied that electrical characteristics of the SBDs are quite function of temperature at low frequencies and temperatures.
Özet
Au/PPy/n-Si (MPS) type SBDs were fabricated and their electrical characteristics were investigated in the temperature range of 140-340 K at 100 and 500 kHz frequencies by using analyzed the C-V measurements. The C-V plots have inversion, depletion and accumulation regions for each temperature. The value of C increases with increasing temperature almost as exponentially in inversion and depletion regions. The reverse bias C-2 vs V plots show a linear behavior in the wide range bias voltage and so the values of doping atoms (ND), Fermi energy (EF), diffusion potential (Vd), and barrier height (B(C-V)) were obtained from intercepts and slopes of these plots for each temperature and frequency. While the EF increases with increasing temperature, B decreases as linearly. The l values of B(C-V) range from 0.703 eV at 140 K to 0.161 eV at 340 K for 100 kHz and 0.810 eV at 140 K to 0.391 eV at 340 K for 500 kHz, respectively. The electrical conductivity (ac) increases as exponential with temperature. The activation energy (Ea) values were found as 30.8 meV from the slope Ln(ac)-q/kT plot. These results implied that electrical characteristics of the SBDs are quite function of temperature at low frequencies and temperatures.