Journals / Eskişehir Teknik Üniversitesi Bilim ve Teknoloji Dergisi B - Teorik Bilimler / 2020 / Cilt: 8 - Sayı: 2
A COMPREHENSIVE DETERMINING OF CAPACITANCE -VOLTAGE PARAMETERS OF ELECTRONIC DEVICES WITH METAL AND p-Si JUNCTION
- Pages
- 247–256
- DOI
- —
Abstract
Al-p-Si-Al structures were fabricated and temperature dependent capacitance versus voltage measurements were performed in this study. The Al contacts were grown by the sputtering method and then capacitance-voltage characteristics of the devices were performed with forward and reverse biases. According to this measurements, the C-2 –V plots were conducted. With the help of those calculation, the barrier height vs temperature (ΦCV – T), the carrier concentration vs temperature (NA – T) and the depletion width vs temperature (w – T) graphs were plotted. In conclusion, it has been seen that the ΦCV and w decreased, and NA almost remained constant with increasing temperature.
Özet
Al-p-Si-Al structures were fabricated and temperature dependent capacitance versus voltage measurements were performed in this study. The Al contacts were grown by the sputtering method and then capacitance-voltage characteristics of the devices were performed with forward and reverse biases. According to this measurements, the C-2 vs V plots were conducted. With the help of those calculation, the barrier height vs temperature (ΦCV vs T), the carrier concentration vs temperature (NA vs T) and the depletion width vs temperature (w vs T) graphs were plotted. In conclusion, it has been seen that the ΦCV and w decreased, and NA remained constant with increasing temperature.0000-0001-8040-8054