Operation of bipolar and field effect transistors in radiation environments

Özet

Öz An investigation of radiation damage in bipolar and field effect transistors is presented. For low frequency transistors, 90 % of the damage in forward current gain occurs at k>w y doses around 100 K. rads. On the other hand, tlıe effects on microwave transistors occur at lıigher- dosc levels up to 100 x 106 rads. The damage effect has minimum that usually corresponds to the low (0.10 mA.) and higher (300 mA) ends of the operating collector current range of a device.