Journals / Konya Journal of Engineering Sciences / 2022 / Cilt: 10 Sayı: 1

FABRICATION OF THE P-N JUNCTION ULTRAVIOLET PHOTODETECTORS BASED ON METAL OXIDE NANOPARTICLES

Metal Oksit Nanopartikül Esaslı P-N Eklem UV Fotodedektörlerin Üretimi

Pages
240–248
Publication Date
2022-03-01
DOI
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AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

The responsivity (R) and specific detectivity (D*) of the best device were 3.11 mA/W and 2.37x1011 Jones, respectively at -1.5 V under 3 mW/cm2 light intensity.

📌 3 Key Takeaways

🎯
Objective & Hypothesis:Recently, wide bandgap metal oxides have attracted tremendous attention in the field of UV photodetectors due to their promising optoelectronic properties.
📊
Key Findings & Data:Among these designs, p-n junction UV photodetectors exhibited remarkable performance.
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Conclusion & Impact:The responsivity (R) and specific detectivity (D*) of the best device were 3.11 mA/W and 2.37x1011 Jones, respectively at -1.5 V under 3 mW/cm2 light intensity.
🔬Design:Research Article
📍Scope:Comprehensive Sample
⚙️Variables:UV fotodedektör · Metal oksit nanopartiküller · P-N hetero-eklem

Abstract

Recently, wide bandgap metal oxides have attracted tremendous attention in the field of UV photodetectors due to their promising optoelectronic properties. Up to now, various approaches have been used to design metal oxide-based UV photodetectors. Among these designs, p-n junction UV photodetectors exhibited remarkable performance. In this study, TiO2/CuCrO2 p-n junction as a UV photodetector was fabricated with spin coating method for the first time. The morphological and optical properties of the fabricated devices were investigated in detail. Moreover, the effect of the CuCrO2 thickness on the performance of the UV photodetector was explored. The fabricated devices showed promising diode behavior and UV response. The responsivity (R) and specific detectivity (D*) of the best device were 3.11 mA/W and 2.37x1011 Jones, respectively at -1.5 V under 3 mW/cm2 light intensity.

Özet

Son zamanlarda, geniş bant aralığı değerine sahip metal oksitler umut vaat eden optoelektronik özelliklerinden dolayı UV fotodedektör uygulamalarında ilgi görmektedir. Bugüne kadar yapılan çalışmalarda, farklı yaklaşımlar kullanılarak metal oksit esaslı UV fotodedektörler geliştirilmeye çalışılmıştır. Bunlar içerisinde, p-n eklem UV fotodedektörler gösterdikleri performans ile dikkat çekmiştir. Bu çalışmada, basit çözelti esaslı yöntemler kullanılarak ilk defa TiO2/CuCrO2 p-n eklem UV fotodedektörler üretilmiştir. Üretilen malzemelerin morfolojik ve optik özellikleri detaylı bir şekilde analiz edilmiştir. Buna ek olarak, CuCrO2 film kalınlığının UV fotodedektör performansına etkisi incelenmiştir. Üretilen p-n eklemlerin umut vaat eden diyot davranış sergilediği ve UV ışığa karşı duyarlı olduğu gözlemlenmiştir. En iyi performans gösteren dedektörün, 1,5 V gerilim ve 3 mW/cm2 ışık şiddeti altında fotoyanıt değeri 3.11 mA/W ve spesifik dedektivite (D*) değeri ise 2.37x1011 Jones olarak bulunmuştur.

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Cite This Article

KAYA, İ. C. (2022). FABRICATION OF THE P-N JUNCTION ULTRAVIOLET PHOTODETECTORS BASED ON METAL OXIDE NANOPARTICLES. Konya Journal of Engineering Sciences, Cilt: 10 Sayı: 1, 240–248. https://ajindex.com/articles/909025

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