It is found that the dislocation density increases with increasing crystal crosscut.
📌 3 Key Takeaways
🎯
Objective & Hypothesis:Crystals b-Sn are grown from ingots of 99.99% purity by modified Bridgman method under 10-3 torr pressure and oriented by Laue back reflection method.
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Key Findings & Data:The relation between crystal crosscut and dislocation density calculated using etch hillock technique is investigated.
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Conclusion & Impact:It is found that the dislocation density increases with increasing crystal crosscut.
🔬Design:Research Article
📍Scope:Comprehensive Sample
⚙️Variables:Turk. J. Phys. · (1998) · 803-810. Full text: pdf Other articles published in the same issue: Turk. J. Phys.
Abstract
Crystals b-Sn are grown from ingots of 99.99% purity by modified Bridgman method under 10-3 torr pressure and oriented by Laue back reflection method. The relation between crystal crosscut and dislocation density calculated using etch hillock technique is investigated. It is found that the dislocation density increases with increasing crystal crosscut.
Özet
Crystals b-Sn are grown from ingots of 99.99% purity by modified Bridgman method under 10-3 torr pressure and oriented by Laue back reflection method. The relation between crystal crosscut and dislocation density calculated using etch hillock technique is investigated. It is found that the dislocation density increases with increasing crystal crosscut.
DÜZGÜN, B., KARAMAN, İ. (1998). The Relation Between Dislocation Density and Crystal Crosscut in b-Sn Grown by Modified Bridgman Method. Turkish Journal of Physics, Cilt: 22 - Sayı: 8, 803–810. https://ajindex.com/articles/724208