Journals / Turkish Journal of Physics / 1999 / Cilt: 23 - Sayı: 4

Single Si d-Doped GaAs Investigations by New Photothermal Wavelength Modulated Photocurrent Technique

Pages
689–700
Publication Date
1999-04-01
DOI
—
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AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

The dependence of the excitonic peaks on the chopping frequency and the intensity are discussed.

📌 3 Key Takeaways

🎯
Objective & Hypothesis:New Photothermal Wavelength Modulated Photocurrent (PWMPC) technique is reported.
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Key Findings & Data:Two spectral features were observed at 1.5137 eV and 1.5115 eV at 20 K.
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Conclusion & Impact:The dependence of the excitonic peaks on the chopping frequency and the intensity are discussed.
🔬Design:Research Article
📍Scope:Comprehensive Sample
⚙️Variables:Turk. J. Phys. · (1999) · 689-700. Full text: pdf Other articles published in the same issue: Turk. J. Phys.

Abstract

New Photothermal Wavelength Modulated Photocurrent (PWMPC) technique is reported. This technique is used for investigation of the MBE grown p-GaAs sample in which a single Si-layer was embedded with a d-type profile. Two spectral features were observed at 1.5137 eV and 1.5115 eV at 20 K. These peaks were attributed to the (D°,X) and (A°,X)-excitons bound to neutral donors and acceptors, respectively. We studied the temperature dependence of these excitonic peaks positions at temperatures between 20-90 K. Additionally, we demonstrate a blue shift of photocurrent spectra under a low level illumination intensity. PWMPC technique and the nature of the registered signals were explored in detail. The dependence of the excitonic peaks on the chopping frequency and the intensity are discussed.

Özet

New Photothermal Wavelength Modulated Photocurrent (PWMPC) technique is reported. This technique is used for investigation of the MBE grown p-GaAs sample in which a single Si-layer was embedded with a d-type profile. Two spectral features were observed at 1.5137 eV and 1.5115 eV at 20 K. These peaks were attributed to the (D°,X) and (A°,X)-excitons bound to neutral donors and acceptors, respectively. We studied the temperature dependence of these excitonic peaks positions at temperatures between 20-90 K. Additionally, we demonstrate a blue shift of photocurrent spectra under a low level illumination intensity. PWMPC technique and the nature of the registered signals were explored in detail. The dependence of the excitonic peaks on the chopping frequency and the intensity are discussed.

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Cite This Article

HAJIEV, F., ÖZKAN, Y. (1999). Single Si d-Doped GaAs Investigations by New Photothermal Wavelength Modulated Photocurrent Technique. Turkish Journal of Physics, Cilt: 23 - Sayı: 4, 689–700. https://ajindex.com/articles/724199

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