The direct and indirect band gaps of gallium sulfide thin film were calculated from the absorption spectra as 2.76 and 2.10 eV, respectively.
📌 3 Key Takeaways
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Objective & Hypothesis:Structural, morphological, and optical properties of gallium sulfide film grown by chemical bath deposition have been investigated by XRD, SEM, AFM, and optical absorption techniques.
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Key Findings & Data:Gallium sulfide film had an island-like structure with a random distribution on a glass substrate.
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Conclusion & Impact:The direct and indirect band gaps of gallium sulfide thin film were calculated from the absorption spectra as 2.76 and 2.10 eV, respectively.
🔬Design:Research Article
📍Scope:Comprehensive Sample
⚙️Variables:Gallium sulfide · chemical bath deposition technique · XRD
Abstract
Structural, morphological, and optical properties of gallium sulfide film grown by chemical bath deposition have been investigated by XRD, SEM, AFM, and optical absorption techniques. The XRD spectrum indicated that the gallium sulfide film grew in crystalline form and the phase was identified as GaS. Gallium sulfide film had an island-like structure with a random distribution on a glass substrate. The particle size of the crystallites and surface roughness of the film were found to be 28-48 nm and 11.84 nm, respectively. The direct and indirect band gaps of gallium sulfide thin film were calculated from the absorption spectra as 2.76 and 2.10 eV, respectively.
ERTAP, H., BAYDAR, T., YÜKSEK, M., KARABULUT, M. (2016). Structural and optical properties of gallium sulfide thin film. Turkish Journal of Physics, Cilt: 40 - Sayı: 3, 297–303. https://ajindex.com/articles/723955