Abstract.In this study, the effects of electric fields, the concentrations of nitrogen and indium on infrared transitions between 1s, 2s ve 2p± donor impurity energy levels at the single GaInNAs/GaAs quantum well are investigated using the variational method in the framework of the effective mass approximation.Key Words: Single quantum well, band anti-crossing (BAC) model, Impurity binding energy, Dilute III-N-V semiconductors
📌 3 Key Takeaways
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Objective & Hypothesis:Abstract.In this study, the effects of electric fields, the concentrations of nitrogen and indium on infrared transitions between 1s, 2s ve 2p± donor impurity energy levels at the single GaInNAs/GaAs quantum well are investigated using the variational method in the framework of the effective mass approximation.Key Words: Single quantum well, band anti-crossing (BAC) model, Impurity binding energy, Dilute III-N-V semiconductors
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Key Findings & Data:Abstract.In this study, the effects of electric fields, the concentrations of nitrogen and indium on infrared transitions between 1s, 2s ve 2p± donor impurity energy levels at the single GaInNAs/GaAs quantum well are investigated using the variational method in the framework of the effective mass approximation.Key Words: Single quantum well, band anti-crossing (BAC) model, Impurity binding energy, Dilute III-N-V semiconductors
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Conclusion & Impact:Abstract.In this study, the effects of electric fields, the concentrations of nitrogen and indium on infrared transitions between 1s, 2s ve 2p± donor impurity energy levels at the single GaInNAs/GaAs quantum well are investigated using the variational method in the framework of the effective mass approximation.Key Words: Single quantum well, band anti-crossing (BAC) model, Impurity binding energy, Dilute III-N-V semiconductors
🔬Design:Modeling & Simulation
📍Scope:Comprehensive Sample
⚙️Variables:Domain Parameters
Abstract
Abstract.In this study, the effects of electric fields, the concentrations of nitrogen and indium on infrared transitions between 1s, 2s ve 2p± donor impurity energy levels at the single GaInNAs/GaAs quantum well are investigated using the variational method in the framework of the effective mass approximation.Key Words: Single quantum well, band anti-crossing (BAC) model, Impurity binding energy, Dilute III-N-V semiconductors
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Cite This Article
Ungan, F., Al, E. B., Yıldız, Y. E. (2015). SAFSIZLIK DÜZEYLERİ ARASINDAKİ KIZILÖTESİ GEÇİŞLER ÜZERİNE ELEKTRİK ALAN ETKİSİ. Cumhuriyet Science Journal, Cilt: 36 - Sayı: 7, 153–173. https://ajindex.com/articles/714446