JV measurements determine that the performance of the graded structure is higher.
📌 3 Key Takeaways
🎯
Objective & Hypothesis:In this study, graded (A) InxGa1-xN (10.5 ≤ x ≤ 18.4) and non graded (B) InxGa1-xN (13.6 ≤ x ≤ 24.9) samples are grown on c-oriented sapphire substrate using the Metal Organic Chemical Vapour Deposition (MOCVD) technique.
📊
Key Findings & Data:The structural, optical and electrical features of the grown InGaN/GaN solar cell structures are analyzed using High Resolution X-Ray Diffraction (HRXRD), Photoluminescense (PL), Ultraviolet (UV), current density and potential (JV) measurements.
💡
Conclusion & Impact:JV measurements determine that the performance of the graded structure is higher.
🔬Design:Research Article
📍Scope:Comprehensive Sample
⚙️Variables:InGaN/GaN · Solar cell · MOCVD
Özet
In this study, graded (A) InxGa1-xN (10.5 ≤ x ≤ 18.4) and non graded (B) InxGa1-xN (13.6 ≤ x ≤ 24.9) samples are grown on c-oriented sapphire substrate using the Metal Organic Chemical Vapour Deposition (MOCVD) technique. The structural, optical and electrical features of the grown InGaN/GaN solar cell structures are analyzed using High Resolution X-Ray Diffraction (HRXRD), Photoluminescense (PL), Ultraviolet (UV), current density and potential (JV) measurements. According to the HRXRD results; it is determined that the InGaN layer of the graded structure has a lower FWHM (Full width at half maximum) value. From the PL measurements, it is observed that the GaN half-width peak value of the graded sample is narrower and the InGaN peak width value of the graded sample is larger. From UV measurements, that the graded sample has a greater band range. JV measurements determine that the performance of the graded structure is higher.
DURUKAN, İ. K., ÖZTÜRK, M. K., ÖZÇELİK, S., ÖZBAY, E. (2017). Analysis of the Mosaic Defects in Graded and Non Graded In<sub>x</sub>Ga<sub>1-x</sub>N Solar Cell Structures. Süleyman Demirel Üniversitesi Fen Bilimleri Enstitüsü Dergisi, Cilt: 21 - Sayı: 1, 235–240. https://ajindex.com/articles/701232
Nakamura, S., Pearton, S., Fasol, G. 2000.The Blue Laser Diode, Springer, Berlin,56s
Arslan, E., Demirel, P., Cakmak, H., Ozturk, M.K., Ozbay, E. 2014. Mosaic Structure Characterization of the AlInN Layer Grown on Sapphire Substrate. Advances in Materials Science and Engineering, 2014, 1-11
Davydov, V.Yu., Klochikhin, A.A., Seisyan, R.P., Emtsev, V.V., Ivanov, S.V., Bechstedt, F., Furthmuller, J., Harima, H., Mudryi, A.V., Aderhold, J., Semchinova, O., Graul, J. 2002. Absorption and Emission of Hexagonal InN Evidence of Narrow Fundamental Band Gap. Phys. Status Solidi B, 229,R1-R3
Wu., J., Walukiewicz., W., Yu., K. M., Ager III., J. W., Haller, E.E., Lu, Schaff, H. W. J.,Saito, Y., Nanishi, Y. 2002. Unusual properties of the fundamental band gap of InN, Appl. Phys. Lett., 80, 3967-3969
Matsuoka, T., Okamoto, H., Nakao, M., Harima, H., Kurimoto, E. 2002. Optical bandgap energy of wurtzite InN. Appl. Phys. Lett., 81,1246-1248
Omkar, J., Ian, F. 2007. Design and characterization of GaN/InGaN solar cells. Appl.Phys.Lett., 91, 1-3
Luque, A., Marti, A. 2001. A metallic intermediate band high efficiency solar cell. Prog. Photovoltaics, 9, 73-86
Yamaguchi, M., Takamoto, T., Araki, K. 2006. Super high-efficiency multi-junction and concentrator solar cells. Solar Energy Mater Solar Cells, 90(18,19), 3068–3077
King, R. R., Law, D. C., Edmondson, K. M., Fetzer, C. M., Kinsey, G. S., Yoon, H., Sherif, R. A., Karam, N. H. 2007. 40% efficient metamorphic GaInP/GaInAs/Ge multijunction solar cells. App. Phys. Lett., 90, 1-3
De Vos, A. 1992. Endoreversible Thermodynamics of Solar Energy Conversion, Oxford University Press, Oxford, 90s
Nanishi, Y., Saito, Y., Yamaguchi, T. 2003. RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys. Jpn. J. Appl. Phys., 142, 2549-2559
Ugo, L. et al. 2012. Increasing the reliability of solid state lighting system via self healing approaches. Microelectronic Reliability, 52(1),71-89
Kendrick Chito, E. 2008. Revisiting Nitride Semiconductors, Epilayers, p-type Doping and Nanowires. University of Canterbury, Electrical and Electronic Engineering, NewZeland, 49s
Brown, G.F., Ager III, J.W., Walukiewicz, W., Wu, J. 2010. Finite element simulations of compositionally graded InGaN solar cells. Solar Energy Materials and Solar Cells, 94, 478-483
Yamaguchi, T., Morioka, C., Mizuo, K., Hori, M., Araki, T., Nanishi, Y., Suzuki, A. 2003. Growth of InN an