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Journals / Turkish Journal of Physics / 2002 / Cilt: 26 - Sayı: 6

The temperature dependence of the electronic structure of Si $delta$-doped GaAs

Emine ÖZTÜRK
Pages
465–471
Publication Date
2022-11-03
DOI
—
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AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

We have seen that the change of the electronic properties as dependent on temperature is less pronounced at higher doping concentration.

📌 3 Key Takeaways

🎯
Objective & Hypothesis:We investigated theoretically the change of electronic properties of Si $delta$-doped GaAs layer as a function of temperature.
📊
Key Findings & Data:We studied the influence of temperature on the donor concentration for a nonuniform distribution, which is taken as different from the known Gaussian distribution.
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Conclusion & Impact:We have seen that the change of the electronic properties as dependent on temperature is less pronounced at higher doping concentration.
🔬Design:Research Article
📍Scope:Comprehensive Sample
⚙️Variables:Domain Parameters

Abstract

We investigated theoretically the change of electronic properties of Si $delta$-doped GaAs layer as a function of temperature. We studied the influence of temperature on the donor concentration for a nonuniform distribution, which is taken as different from the known Gaussian distribution. In order to obtain the electronic structure we have calculated self-consistent Schrödinger - Poisson equations. We have seen that the change of the electronic properties as dependent on temperature is less pronounced at higher doping concentration.

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Cite This Article

ÖZTÜRK, E. (2022). The temperature dependence of the electronic structure of Si $delta$-doped GaAs. Turkish Journal of Physics, Cilt: 26 - Sayı: 6, 465–471. https://ajindex.com/articles/614073

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