Journals / Süleyman Demirel Üniversitesi Fen Bilimleri Enstitüsü Dergisi / 2017 / Cilt: 21 - Sayı: 1

Analysis of the Mosaic Defects in Graded and Non Graded InxGa1‐xN Solar Cell Structures

Dereceli ve Derecesiz InXGa1‐XN Güneş Hücresi Yapılarındaki Mozaik Kusurların Analizi

Pages
235–240
Publication Date
2022-10-17
DOI
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AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

JV measurements determine that the performance of the graded structure is higher.

📌 3 Key Takeaways

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Objective & Hypothesis:In this study, graded (A) InxGa1‐xN (10.5 ≤ x ≤ 18.4) and non graded (B) InxGa1‐xN (13.6 ≤ x ≤ 24.9) samples are grown on c‐oriented sapphire substrate using the Metal Organic Chemical Vapour Deposition (MOCVD) technique.
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Key Findings & Data:The structural, optical and electrical features of the grown InGaN/GaN solar cell structures are analyzed using High Resolution X‐Ray Diffraction (HRXRD), Photoluminescense (PL), Ultraviolet (UV), current density and potential (JV) measurements.
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Conclusion & Impact:JV measurements determine that the performance of the graded structure is higher.
🔬Design:Research Article
📍Scope:Comprehensive Sample
⚙️Variables:Domain Parameters

Abstract

In this study, graded (A) InxGa1‐xN (10.5 ≤ x ≤ 18.4) and non graded (B) InxGa1‐xN (13.6 ≤ x ≤ 24.9) samples are grown on c‐oriented sapphire substrate using the Metal Organic Chemical Vapour Deposition (MOCVD) technique. The structural, optical and electrical features of the grown InGaN/GaN solar cell structures are analyzed using High Resolution X‐Ray Diffraction (HRXRD), Photoluminescense (PL), Ultraviolet (UV), current density and potential (JV) measurements. According to the HRXRD results; it is determined that the InGaN layer of the graded structure has a lower FWHM (Full width at half maximum) value. From the PL measurements, it is observed that the GaN half‐width peak value of the graded sample is narrower and the InGaN peak width value of the graded sample is larger. From UV measurements, that the graded sample has a greater band range. JV measurements determine that the performance of the graded structure is higher.

Özet

Bu çalışmada, dereceli InxGa1‐xN (A) (10.5 ≤ x ≤ 18.4) ve derecesiz (B) InxGa1‐ xN (13.6 ≤ x ≤ 24.9) örnekleri c yönelimli safir alttaş üzerine Metal Organik Kimyasal Buhar Biriktirme Tekniği ile büyütüldü. InGaN/GaN güneş hücresi yapıları Yüksek Çözünürlüklü X‐Ray Kırınım(HRXRD), Fotolüminesans (PL) ve Ultraviyole (UV), Akım yoğunluğu ve potansiyel ölçümleri (JV) ile analiz edildi. XRD sonuçlarına göre dereceli InGaN yapısı düşük FWHM değerlerine sahiptir. PL ölçümlerinde ise dereceli yapıdaki GaN’ın ortalama yarıgenişlik değeri daha dar ve InGaN’ ın pik genişliği dereceli yapı olması nedeniyle daha geniştir. UV ölçümlerinden dereceli yapının genişleyen bant aralığına sahip olduğu görüldü. JV ölçümlerinden ise dereceli yapının performansının daha yüksek olduğu belirlendi.

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Cite This Article

DURUKAN, İ. K., ÖZBAY, E., ÖZTÜRK, M. K., ÖZÇELİK, S. (2022). Analysis of the Mosaic Defects in Graded and Non Graded InxGa1‐xN Solar Cell Structures. Süleyman Demirel Üniversitesi Fen Bilimleri Enstitüsü Dergisi, Cilt: 21 - Sayı: 1, 235–240. https://ajindex.com/articles/593974

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References (1)

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