Journals / Anadolu Üniversitesi Fen Fakültesi Dergisi / 1996 / Cilt: 0 - Sayı: 2

The electrical, optical and crystal structure of CdS and $Cd_{0.8}ln_{0.2}S$ films grown by spray pyrolysis method

Spray pyrolysis metodu ile elde edilen CdS ve $Cd_{0.8}ln_{0.2}S$ filmlerinin bazı fiziksel özelliklerinin incelenmesi

Pages
161–172
Publication Date
2022-10-11
DOI
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AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

The x-ray spectrum of the films showed that they are polycrystalline.

📌 3 Key Takeaways

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Objective & Hypothesis:The films of the CdS and $Cd_{0.8}ln_{0.2}S$ compound semiconductors have been deposited by spray pyrolysis method onto pyrex substrate at temperature 350 °C.
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Key Findings & Data:The electrical resistivities of CdS and $Cd_{0.8}ln_{0.2}S$ films were found 2.5x$10^4$ (ohm-cm) and 2.5x$10^2$ (ohm-cm), respectively.
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Conclusion & Impact:The x-ray spectrum of the films showed that they are polycrystalline.
🔬Design:Research Article
📍Scope:Comprehensive Sample
⚙️Variables:Domain Parameters

Abstract

The films of the CdS and $Cd_{0.8}ln_{0.2}S$ compound semiconductors have been deposited by spray pyrolysis method onto pyrex substrate at temperature 350 °C. The electrical resistivities of CdS and $Cd_{0.8}ln_{0.2}S$ films were found 2.5x$10^4$ (ohm-cm) and 2.5x$10^2$ (ohm-cm), respectively. After annealing, the resistivities of CdS were obtained between 2.5x$10^4$ and 5x$10^6$ (ohm-cm). The values of the resistivities for $Cd_{0.8}ln_{0.2}S$ film were found between 2.5x$10^2$ and 2.5x$10^5$ (ohm-cm). The band gaps were found as 2.42-2.44 eV for CdS and 2.39-2.44 eV for $Cd_{0.8}ln_{0.2}S$ film. The crystal structure of the films were studied by x-ray powder method, and the crystal systems of them were determined as hexagonal from ASTM cards. In our work, the resistivities of CdS and $Cd_{0.8}ln_{0.2}S$ films have increased after annealing, but the resistivity of $Cd_{0.8}ln_{0.2}S$ film was found less than the resistivity of CdS film. The x-ray spectrum of the films showed that they are polycrystalline.

Özet

Spray pyrolysis metodu ile 350 °C taban sıcaklığında elde edilen CdS ve $Cd_{0.8}In_{0.2}S$ filimlerinin bazı elektrik ve optik özellikleri ile kristal yapıları incelenmiştir. Bu filimlerin, elektrik özdirençleri tavlamadan önce sırası ile 2.5x$10^4$ (ohm-cm) ve 2.5x$10^2$ (ohm-cm) ve 250-450 °C arasındaki sıcaklıklarda, tavlamadan sonra CdS için 2.5x$10^4$-5x$10^6$ (ohm cm), $Cd_{0.8}ln_{0.2}S$ için 2.5x$10^2$-2.5x$10^5$ (ohm cm) arasında değiştiği hesaplanmıştır. Bu filimlerin yasak enerji aralıkları optik metodla CdS için 2.42 eV ve 2.44 ev, $Cd_{0.8}ln_{0.2}S$ için 2-39 eV ve 2-44 eV olmak üzere farklı ikişer değer bulunmuştur. X-ışını toz kırınım desenlerinden heriki filimin kristal yapılarının ASTM kartlarından hegzagonal olduğu tesbit edilmiştir. Yaptığımız deney sonucunda elde edilen $Cd_{0.8}ln_{0.2}S$ bilimlerin, tavlama işleminden sonra özdirençlerinde belirgin bir artışın olduğu görülmüştür. $Cd_{0.8}ln_{0.2}S$ filiminin özdirenci.CdS' ün özdirencine göre tavlamadan önce ve sonra biraz düşük ölçülmüştür. X-ışını spektrumları bu filimlerin polikristal olduklarını göstermektedir.

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Cite This Article

ÖRNEK, O., İZCİ, F., KÖSE, S. (2022). The electrical, optical and crystal structure of CdS and $Cd_{0.8}ln_{0.2}S$ films grown by spray pyrolysis method. Anadolu Üniversitesi Fen Fakültesi Dergisi, Cilt: 0 - Sayı: 2, 161–172. https://ajindex.com/articles/438669