Journals / Anadolu Üniversitesi Fen Fakültesi Dergisi / 2001 / Cilt: 0 - Sayı: 6

Optical properties of CdIn2S4 semiconductor films

CdIn2S4 yarıiletken filmlerinin optik özellikleri

Pages
73–81
Publication Date
2022-10-11
DOI
—
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AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

In this study, the energy gap values of CdIn2S4 compound semiconductor films produced by means of the spray pyrolysis method are calculated to be 2.43-2.53 eV from optical absorption spectrum of films at room temperature.

📌 3 Key Takeaways

🎯
Objective & Hypothesis:In this study, the energy gap values of CdIn2S4 compound semiconductor films produced by means of the spray pyrolysis method are calculated to be 2.43-2.53 eV from optical absorption spectrum of films at room temperature.
📊
Key Findings & Data:In this study, the energy gap values of CdIn2S4 compound semiconductor films produced by means of the spray pyrolysis method are calculated to be 2.43-2.53 eV from optical absorption spectrum of films at room temperature.
💡
Conclusion & Impact:In this study, the energy gap values of CdIn2S4 compound semiconductor films produced by means of the spray pyrolysis method are calculated to be 2.43-2.53 eV from optical absorption spectrum of films at room temperature.
🔬Design:Research Article
📍Scope:Comprehensive Sample
⚙️Variables:Domain Parameters

Abstract

In this study, the energy gap values of CdIn2S4 compound semiconductor films produced by means of the spray pyrolysis method are calculated to be 2.43-2.53 eV from optical absorption spectrum of films at room temperature.

Özet

Bu araştırmada, spray pyrolysis yöntemiyle elde edilen CdIn2S4 yarıiletken bileşiğinin, oda sıcaklığında çekilen absorpsiyon spektrumlarından, enerji bant aralıkları 2.43-2.53 eV olarak hesaplanmıştır.

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Cite This Article

KUL, M. (2022). Optical properties of CdIn2S4 semiconductor films. Anadolu Üniversitesi Fen Fakültesi Dergisi, Cilt: 0 - Sayı: 6, 73–81. https://ajindex.com/articles/438637

References (9)

  1. Charbonneau, S., Fortin, E. and Anedda, A., Saturation photoconductivity in CdIn2S4, Physical Review B, 31,4, 2326-2329, 1985
  2. Kambas, K., Anagnostopaulos, A., Ves, Ploss, B. and Spyridelis, J., Optical absorption edge investigation of CdIn2S4 and P- In2S3 compounds, Phys. Stat. Sol. (B), 127, 201-208, 1985
  3. Radautsan, S. I., Molodyan, I. P., Syrbu, N. N., Tezlevan, V. E. and Shipitka, A., Optical and photoelectrical properties of CdIn2S4, Phys. Stat. Sol. (B), 49, K175-K179, 1972
  4. Meloni, F. and Mula, G., Pseudopotential calculation of the band structure of CdIn2S4, Physical Review B, 2, 2, 392-396, 1970
  5. Aresti, A. and Congiu, A., Transport properties of CdIn2S4 single crystals, Phys. Stat. Sol. (A), 16, K55-K58, 1973
  6. Endo, S. and Irie, T., Transport properties of CdIn2S4 single crystals, J. Phys. Chem. Solids, 37, 201-209, 1976
  7. Ihara, M., Abe, H., Endo, S. and Irie, T., Valance band densities of states of CdIn2S4 and In2S3 from x-ray photoelectron spectroscopy, Solid State Communications, 28, 563-565, 1978
  8. Mott, N.F. and Davis, E.A., Electronic processes in non-crystalline materials, Clarendon Press, London, 437, 1971
  9. Kul, M., Cd(In2S3)S Yarıiletken Filmlerinin Bazı Fiziksel Özellikleri, Doktora Tezi, Osmangazi Üniversitesi, Fen Bilimleri Enstitüsü, 1996.