Journals / Anadolu Üniversitesi Bilim ve Teknoloji Dergisi :A-Uygulamalı Bilimler ve Mühendislik / 2002 / Cilt: 3 - Sayı: 2

Zn $(In_2S_3)$S yarıiletken filmlerinin frekansa bağlı iletkenliği

Frequency dependent in Zn$(In_2S_3)$ S semiconductor films

Pages
293–296
Publication Date
2022-10-11
DOI
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AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

In the conductivity vs frequency characteristic of Zn$(InS_{1.5})$S, on the otherhand, showed that s~1.5 at higher frequencies.

📌 3 Key Takeaways

🎯
Objective & Hypothesis:Zn$(In_2S_3)$S films have been deposited with decreasing amount of the $In_2S_3 contents by the spray pyrolysis technique.
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Key Findings & Data:On the ac measurements, the conductivities were measured with respect to the frequency and it was observed that conductivities depend on the frequency in the form of $omega^s$ where s is 0.7.
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Conclusion & Impact:In the conductivity vs frequency characteristic of Zn$(InS_{1.5})$S, on the otherhand, showed that s~1.5 at higher frequencies.
🔬Design:Research Article
📍Scope:Comprehensive Sample
⚙️Variables:Domain Parameters

Abstract

Zn$(In_2S_3)$S films have been deposited with decreasing amount of the $In_2S_3 contents by the spray pyrolysis technique. The metal-semiconductor-metal systems have been produced in planar form. On the ac measurements, the conductivities were measured with respect to the frequency and it was observed that conductivities depend on the frequency in the form of $omega^s$ where s is 0.7. This variation of the ac conductivity is attributed to the hopping of charge carriers between the localized states. In the conductivity vs frequency characteristic of Zn$(InS_{1.5})$S, on the otherhand, showed that s~1.5 at higher frequencies.

Özet

Zn$(In_2S_3)$S yarıiletken filmleri, yapıdaki $In_2S_3$ miktarı azaltılarak, spray pyrolysis tekniği ile elde edilmiştir. Elektriksel ölçümler, düzlemsel formda oluşturulan metal-yarıiletken-metal yapılarda elde edilmiştir. Ac elektriksel ölçümlerle; iletkenliğin $omega^s$ modeline uyduğu gözlenmiş ve s değerinin 0,7 olduğu hesaplanmıştır. İletkenliğin frekansa üssel bağlılığı, iletimin serbest yükler tarafından lokalize durumlar arasında hopping iletim ile sağlandığının bir sonucudur. Zn$(InS_{1.5})$S filmindeki iletkenlik-frekans bağımlılığı yüksek frekanslarda ise s~1.5 olarak gözlenmiştir.

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Cite This Article

AYBEK, A. Ş., ZOR, M. (2022). Zn $(In_2S_3)$S yarıiletken filmlerinin frekansa bağlı iletkenliği. Anadolu Üniversitesi Bilim ve Teknoloji Dergisi :A-Uygulamalı Bilimler ve Mühendislik, Cilt: 3 - Sayı: 2, 293–296. https://ajindex.com/articles/438490

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