Journals / Anadolu Üniversitesi Bilim ve Teknoloji Dergisi :A-Uygulamalı Bilimler ve Mühendislik / 2002 / Cilt: 3 - Sayı: 2

Importance of curent density in development of semi-conductor diods

Yarıiletken diyot lazerlerinin gelişiminde akım yoğunluğunun önem ve seyri

Pages
211–218
Publication Date
2022-10-11
DOI
—
🏛️Bibliographic metadata and full text access for this article are provided via DergiPark.
DergiPark Record ↗
✨

AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

In the quantum dot lasers a sharp luminescence spectrum and very low threshold currents have been obtained.

📌 3 Key Takeaways

🎯
Objective & Hypothesis:The earliest semiconductor diode lasers are p-n junctions formed almost in cyristalline blocks of gallium arsenide.
📊
Key Findings & Data:At injected current density the stimulated emission from the electron-hole recombination in the p-n homojunc-tion plane creates the optical gain sufficiently.
💡
Conclusion & Impact:In the quantum dot lasers a sharp luminescence spectrum and very low threshold currents have been obtained.
🔬Design:Research Article
📍Scope:Comprehensive Sample
⚙️Variables:Domain Parameters

Abstract

The earliest semiconductor diode lasers are p-n junctions formed almost in cyristalline blocks of gallium arsenide. At injected current density the stimulated emission from the electron-hole recombination in the p-n homojunc-tion plane creates the optical gain sufficiently. The current densities for the semiconductor lasers are more reduced by designing single-heterojunction, double-heterojunction, and then the quantum-well and the quantum-dot lasers, starting from this principle. In the quantum dot lasers a sharp luminescence spectrum and very low threshold currents have been obtained.

Özet

İlk yarıiletken diyot lazerler, çoğunlukla galyum arsenit kristal bloklarından yapılmış p-n jonksiyonlarıdırlar. Enjekte edilen akım yoğunluğunda p-n homojonksiyon düzleminde elektron-delik birleşmesinden meydana gelen zorlanmış emisyon malzemenin yasak bant genişliğine tekabül eden enerjilerin frekanslarında yeterli optik kazanç sağlar. Bu prensipten hareketle, tek heterojonksiyonlu, çift heterojonksiyonlu ve müteakiben kuantum çukurlu ve kuantum noktalı lazerler dizayn edilerek yarıiletken lazerlere ait akım yoğunlukları oldukça küçültülmüştür. Kuantum noktalı lazerlerde keskin lüminesans spektrum ve oldukça düşük eşik akımları elde edilmiştir.

🔖

Cite This Article

TEMİZ, M. (2022). Importance of curent density in development of semi-conductor diods. Anadolu Üniversitesi Bilim ve Teknoloji Dergisi :A-Uygulamalı Bilimler ve Mühendislik, Cilt: 3 - Sayı: 2, 211–218. https://ajindex.com/articles/438482

📄 Full Text PDF Viewer

📄

PDF görüntüleyici hazırlanıyor...

References (14)

  1. Adams, M.J., Steventon, A.G., Devlin, W.J. ve Henning, I.D. (1987). Semiconductor Lasers for Long-Wavelength Optical-Fibre Communication Systems, Peter Peregrinus Ltd., London. Alferov, Zh. I., Andreev, V.M., Korolkov. V.I., Portnov, E.L. ve Tretyakov, D.N. (1968). Fiz. Tekh. Poluprov., 2, 1016-1017.
  2. Arakawa, Y. ve Sakaki, H. (1982). Multidimensional quantum well lasers and temperature dependence of its threshold current. Appl. Phys, Lett. 40, 939. Batey, J. ve Wright, S.L. (1986). Energy band alignment in GaAs: (Al,Ga)As hetrostructure: The dependence only alloy composition. J. Appl. Phys. 59(1), 200. Bhattacharya, P. (1998). Semiconductor Optoelectronic Devices. Prentice Hall, Upper Saddle River, New Jersey. Diana, L., Park, H., Zou, Z., Schekin, O.B. ve Dennis, G.D. (2000). Continuos-wave low-threshold performance of 1.3 m InGaAs-GaAs quantum-dot lasers. IEEE Journal of Selected Topics in Quantum Electronics. 6(3), 452-461.
  3. Dousmanis, G.C. Nelson, H., ve Staebler, D.L. (1964). Appl. Phys. Lett. 5, 174-176.
  4. Dyment., J.C. ve D'asaro, L.A. (1967). Appl. Phys. Lett. 11, 292-294.
  5. Hall, R.N., Fenner, G.E., Kingsley, J.D., Soltys, T.J. ve Carlson, R.O. (1962). Coherent light emission from GaAs junctions. Phys. Rev., Lett. 9, 366-368.
  6. Hayashi, I., Panish, M.B. ve Foy, P.W. (1969). A Low Threshold Room-Temperature Injection Laser. IEEE J. Quantum Electron. QE-5, 211-212.
  7. Holonyak, N. Jr, Kolbas, R.M., Düpuis, R.D. ve Dap-kus, P.D. (1980). Quantum-well heterostructure lasers. IEEE J. Quantum Electron. QE-16, 170-185.
  8. Iga, K. (1994). Fundamental of Laser Optics. Plenum Press,
  9. New York. Kroemer, H. (1963). A proposed class of heterojunction injection lasers. Proc. IEEE 51, 1782-1783.
  10. Li, E.H. ve Weiss, B.L. (1991). Bandgap engineering and quantum wells in the optoelectronic devices. Electronics and Communication Engineering Journal April, 63-79.
  11. Nathan, M.I., Dumke, W.P., Bums, G. F.H., Dill, Jr. ve Lasher, G. (1962). Stimulated emission of radiation from GaAs p-n junctions. Appl. Phys. 1, 62-64.
  12. Nelson, H. (1963). RCA Rev., 24, 603-626.
  13. Nikolai, N., L., Grundmann, M., Heinrichsdorff, F., Bimberg, D., Ustinov, V.M., Zhunkov, A. E., Maximov, M.V., Alferov, Zh.I. ve Lott, J.A. (2000). Quantum-dot heterostructure lasers. IEEE Journal of Selected Topics in Quantum Electronics 6(3), 439-451.
  14. Park, G., Huffaker, D.L., Zou, Z., Shekekin, O.B. ve Deppe, D.G. (1999). Temperature dependence of lasing characteristics for long-wavelength (1.3|xm) GaAs-based quantum-dot lasers.