Journals / Anadolu Üniversitesi Bilim ve Teknoloji Dergisi :A-Uygulamalı Bilimler ve Mühendislik / 2004 / Cilt: 5 - Sayı: 2

Ultrasonik kimyasal püskürtme tekniği ile elde edilen CDS:SN filmlerinin bazı fiziksel özellikleri

Some physical properties of CDS:SN films obtained by ultrasonic spray pyrolysis technique

Pages
237–243
Publication Date
2022-10-11
DOI
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AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

Sn doped CdS films can be used as window materials like CdS films in photovoltaic solar cells.

📌 3 Key Takeaways

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Objective & Hypothesis:The most used semiconductor window material in heterojunction so|ar cells in undoped and doped CdS.
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Key Findings & Data:In this work, $Cd_{ı.x}Sn_xS (0leq x leq 0.4)$ films were deposited by ultrasonic spray pyr.öl||is technique at a substrate temperature of 300±5 °C and the effect of Sn incorporation on the film properties is presented.
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Conclusion & Impact:Sn doped CdS films can be used as window materials like CdS films in photovoltaic solar cells.
🔬Design:Research Article
📍Scope:Comprehensive Sample
⚙️Variables:Domain Parameters

Abstract

The most used semiconductor window material in heterojunction so|ar cells in undoped and doped CdS. In this work, $Cd_{ı.x}Sn_xS (0leq x leq 0.4)$ films were deposited by ultrasonic spray pyr.öl||is technique at a substrate temperature of 300±5 °C and the effect of Sn incorporation on the film properties is presented. It was determined that the resis­tivity values of the produced films are between 3.62x$10^2$-1.76x$10^7$ $Omega$ cm in dark and air and the high resistivity of CdS films decreased by Sn doping. The investigations on the electrical properties also showed that CdS and $Cd_{0.8}Sn_{0.2}S$ films have a trapped structure. The forbidden energy gaps were found as 2.43-2,44 eV by using the op­tical method. The transmittance value of CdS film increased when doped with Sn (x=0.2). The surface morpholo­gies of the films were investigated by Metallurgical Optical Microscope and it was determined that the most homo­geneous surface was seen in $Cd_{0.8}Sn_{0.2}S$ films. Sn doped CdS films can be used as window materials like CdS films in photovoltaic solar cells.

Özet

Heteroeklem güneş pillerinde yaygın olarak kullanılan yarıiletken pencere materyali katkısız ve katkılı CdS' dür. Bu çalışmada, $Cd_{ı.x}Sn_xS (0leq x leq 0.4)$ filmleri 300±5 °C taban sıcaklığında ultrasonik kimyasal püskürtme tekni­ği ile çöktürülmüştür ve film özellikleri üzerine Sn katkısının etkisi verilmiştir. Üretilen filmlerin özdirenç değerle­rinin karanlıkta ve havada 3.62x$10^2$-1.76x$10^7$ $Omega$ cm arasında olduğu ve CdS filmlerinin yüksek özdirencinin Sn katkılanarak azaldığı belirlenmiştir. Elektriksel özellikler üzerindeki incelemeler aynı zamanda CdS ve $Cd_{0.8}Sn_{0.2}S$ filmlerinin tuzaklı bir yapıya sahip olduklarını göstermiştir. Yasak enerji aralıkları optik metot kullanılarak 2,43-2,44 eV olarak bulunmuştur. CdS filminin geçirgenlik değeri Sn ile katkılandığında (x=0.2) artmıştır. Filmlerin yü­zey morfolojileri Metalurjik Optik Mikroskop ile incelenmiş ve en homojen yüzeyin $Cd_{0.8}Sn_{0.2}S$ filmlerinde görül­düğü belirlenmiştir. Sn katkılı CdS filmleri fotovoltaik güneş pillerinde CdS filmleri gibi pencere materyali olarak kullanılabilir.

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Cite This Article

KÖSE, S., ATAY, F., BİLGİN, V., AKYÜZ, İ. (2022). Ultrasonik kimyasal püskürtme tekniği ile elde edilen CDS:SN filmlerinin bazı fiziksel özellikleri. Anadolu Üniversitesi Bilim ve Teknoloji Dergisi :A-Uygulamalı Bilimler ve Mühendislik, Cilt: 5 - Sayı: 2, 237–243. https://ajindex.com/articles/438435

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