Journals / Pamukkale Üniversitesi Mühendislik Bilimleri Dergisi / 1998 / Cilt: 4 - Sayı: 1

THE DETERMINATION OF A CRITICAL VALUE FOR DYNAMIC STABILITY OF SEMICONDUCTOR LASER DIODE WITH EXTERNAL OPTICAL FEEDBACK

HARİCİ OPTİK GERİBESLEMELİ YARIİLETKEN LAZER DİYOD'UN DİNAMİK KARARLILIĞI İÇİN KRİTİK DEĞERİN BELİRLENMESİ

Pages
551–555
Publication Date
1998-01-01
DOI
—
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AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

In the study the reflection power has been taken as ( ).

📌 3 Key Takeaways

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Objective & Hypothesis:In this study, dynamic stability analysis of semiconductor laser diodes with external optical feedback has been realized.
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Key Findings & Data:In the analysis the frequency response of the transfer function of laser diode H jw( ), the transfer m function of laser diode with external optical feedback TF jw( ), and optical feedback transfer function m K jw( ) obtained from small signal equations has been m accomplished using Nyquist stability analysis in complex domain.
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Conclusion & Impact:In the study the reflection power has been taken as ( ).
🔬Design:Research Article
📍Scope:Comprehensive Sample
⚙️Variables:Lazer diyod · Kararlılık · Geribesleme

Abstract

In this study, dynamic stability analysis of semiconductor laser diodes with external optical feedback has been realized. In the analysis the frequency response of the transfer function of laser diode H jw( ), the transfer m function of laser diode with external optical feedback TF jw( ), and optical feedback transfer function m K jw( ) obtained from small signal equations has been m accomplished using Nyquist stability analysis in complex domain. The effect of optical feedback on the stability of the system has been introduced and to bring the laser diode to stable condition the working critical boundary range of dampig frequency and reflection power constant (R) has been determined. In the study the reflection power has been taken as ( ).

Özet

Bu çalışmada optik haberleşme sistemlerinde kullanılan optik geribeslemeli yarıiletken lazer diyodun modülasyon altındaki dinamik kararlılık analizi yapılmıştır. Analizde küçük işaret oran eşitliklerinden elde edilen, lazer diyod (LD) transfer fonksiyonu H jw( ), optik geribeslemeli LD transfer fonksiyonu TF jw m ( ) m ve optik geribesleme transfer fonksiyonu K jw( ) 'n m ın frekans cevapları, Nyquist kararlılık kriterine göre kompleks düzlemde analiz edilmiştir. Optik geribeslemenin, sistemin kararlılığına olan etkisi ortaya konularak, LD'un kararlı hale getirmek için sönüm (damping) frekansı ve güç yansıtma sabiti (R)'nin kritik değeri belirlenmiştir. Çalışmada güç yansıma oranı ( ) f ext ? -104 olarak alınmıştır.

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Cite This Article

YILDIRIM, R. (1998). THE DETERMINATION OF A CRITICAL VALUE FOR DYNAMIC STABILITY OF SEMICONDUCTOR LASER DIODE WITH EXTERNAL OPTICAL FEEDBACK. Pamukkale Üniversitesi Mühendislik Bilimleri Dergisi, Cilt: 4 - Sayı: 1, 551–555. https://ajindex.com/articles/43498

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