Objective & Hypothesis:In this work, the alternative analysis of semiconductor single step index lasers for the least mode even and odd fields has been obtained, and the loss and probability ratios of the fields have been alternatively formulated in terms of the structural parameters of laser material such as normalized propagation constant.
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Key Findings & Data:In this work, the alternative analysis of semiconductor single step index lasers for the least mode even and odd fields has been obtained, and the loss and probability ratios of the fields have been alternatively formulated in terms of the structural parameters of laser material such as normalized propagation constant.
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Conclusion & Impact:The results have been numerically confirmed.
🔬Design:Research Article
📍Scope:Comprehensive Sample
⚙️Variables:Normalize yayılım sabiti · Efektif kırılma indisi · Faz hızı
Abstract
In this work, the alternative analysis of semiconductor single step index lasers for the least mode even and odd fields has been obtained, and the loss and probability ratios of the fields have been alternatively formulated in terms of the structural parameters of laser material such as normalized propagation constant. The results have been numerically confirmed.
Özet
Bu çalışmada, yarıiletken tekli basamak kırılma indisli lazerlerin en düşük modlu çift ve tek fonksiyonlu alan için alternatif alan analizi elde edilmiş, asimetrik ve simetrik durumlarda normalize yayılım sabiti gibi bazı yapısal parametreler cinsinden kayıp ve alan olasılık oranlarının alternatif formülleri bulunmuş, bulunan sonuçlar nümerik olarak doğrulanmıştır.
TEMİZ, M., ÜNAL, M. (2009). The Alternative Analysis of Probabilities and Loss Ratios in Semiconductor Single Step Index Lasers. Pamukkale Üniversitesi Mühendislik Bilimleri Dergisi, Cilt: 15 - Sayı: 2, 300–304. https://ajindex.com/articles/42915