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Journals / Turkish Journal of Physics / 2001 / Cilt: 25 - Sayı: 6

Electrical Characterization of GaTe and GaTe:Cu Semiconductor Compounds

Hüsnü Salih GÜDER
BAHATTİN ABAY
Hasan EFEOĞLU
Cevdet COŞKUN
Şakir AYDOĞAN
Yahya Kemal YOĞURTÇU
Pages
523–527
DOI
—
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AI Summary & Key Takeaways

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⚡ TL;DR(Too Long; Didn't Read)

Temperature coefficient of the hole mobility was determined and compared with related theories.

📌 3 Key Takeaways

🎯
Objective & Hypothesis:Electrical properties of GaTe and GaTe:Cu binary compound semiconductors were investigated by Hall effect and resistivity measurements in the 77-320 K temperature range.
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Key Findings & Data:Donor and acceptor densities, compensation ratios, acceptor ionization energies, valence band effective mass of holes and effective density of states in valence band were determined for the undoped and Cu doped samples using the single donor-single acceptor analysis of the hole concentration.
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Conclusion & Impact:Temperature coefficient of the hole mobility was determined and compared with related theories.
🔬Design:Research Article
📍Scope:Comprehensive Sample
⚙️Variables:Electrical characterization · layered semiconductors · GaTe.

Abstract

Electrical properties of GaTe and GaTe:Cu binary compound semiconductors were investigated by Hall effect and resistivity measurements in the 77-320 K temperature range. Donor and acceptor densities, compensation ratios, acceptor ionization energies, valence band effective mass of holes and effective density of states in valence band were determined for the undoped and Cu doped samples using the single donor-single acceptor analysis of the hole concentration. Temperature coefficient of the hole mobility was determined and compared with related theories.

Özet

Electrical properties of GaTe and GaTe:Cu binary compound semiconductors were investigated by Hall effect and resistivity measurements in the 77-320 K temperature range. Donor and acceptor densities, compensation ratios, acceptor ionization energies, valence band effective mass of holes and effective density of states in valence band were determined for the undoped and Cu doped samples using the single donor-single acceptor analysis of the hole concentration. Temperature coefficient of the hole mobility was determined and compared with related theories.

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Cite This Article

GÜDER, H. S., ABAY, B., EFEOĞLU, H., COŞKUN, C., AYDOĞAN, Ş., YOĞURTÇU, Y. K. (2001). Electrical Characterization of GaTe and GaTe:Cu Semiconductor Compounds. Turkish Journal of Physics, Cilt: 25 - Sayı: 6, 523–527. https://ajindex.com/articles/379102

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