Journals / Turkish Journal of Physics / 2001 / Cilt: 25 - Sayı: 3

The Temperature Dependence of Dark Conductivity in Hydrogenated Amorphous SiNx Films

Pages
223–227
DOI
—
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AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

A strong decrease is observed sigma d when the nitrogen content is increased.

📌 3 Key Takeaways

🎯
Objective & Hypothesis:Thin film samples of hydrogenated amorphous silicon nitride with varying nitrogen content were prepared by conventional plasma deposition from a mixture of SiH4 and NH3 .
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Key Findings & Data:The dark conductivity (sd) of the films have been measured in the temperature range 420 K - 100 K.
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Conclusion & Impact:A strong decrease is observed sigma d when the nitrogen content is increased.
🔬Design:Research Article
📍Scope:Comprehensive Sample
⚙️Variables:A. Dark Conductivity · B. Activation energy · C. Pre-exponential factor D. Hydrogenated amorphous silicon nitride

Abstract

Thin film samples of hydrogenated amorphous silicon nitride with varying nitrogen content were prepared by conventional plasma deposition from a mixture of SiH4 and NH3 . The dark conductivity (sd) of the films have been measured in the temperature range 420 K - 100 K. The conductivity is thermally activated with a single activation energy down to 250 K and conduction is dominated by electrons in extended states. A strong decrease is observed sigma d when the nitrogen content is increased.

Özet

Thin film samples of hydrogenated amorphous silicon nitride with varying nitrogen content were prepared by conventional plasma deposition from a mixture of SiH4 and NH3 . The dark conductivity (sd) of the films have been measured in the temperature range 420 K - 100 K. The conductivity is thermally activated with a single activation energy down to 250 K and conduction is dominated by electrons in extended states. A strong decrease is observed sigma d when the nitrogen content is increased.

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Cite This Article

TOLUNAY, H., AY, İ. (2001). The Temperature Dependence of Dark Conductivity in Hydrogenated Amorphous SiNx Films. Turkish Journal of Physics, Cilt: 25 - Sayı: 3, 223–227. https://ajindex.com/articles/378505

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