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Journals / Erciyes Üniversitesi Fen Bilimleri Enstitüsü Fen Bilimleri Dergisi / 2021 / Cilt: 37 - Sayı: 1

Fabrication and Characterization of Polyaniline/ZnO Nanocomposite Field Effect Transistor Based Hydrogen Gas Sensor

Fabrication and Characterization of Polyaniline and PolyanilineNanostructured-ZnO FET Hydrogen Gas Sensors

Mucella ÖZBAY KARAKUŞ
Hidayet ÇETİN
Pages
99–109
Publication Date
2021-04-28
DOI
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AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

Besides, unlike the PANI channel FET sensor, it has been determined that PANI/ZnO channel FET sensors operate with an excellent performance at room temperature.

📌 3 Key Takeaways

🎯
Objective & Hypothesis:In this study, micron-sized Field Effect Transistor (FET) based sensors were produced using Polyaniline (PANI) channels.
📊
Key Findings & Data:FET production was carried out by producing PANI and PANI/ZnO channel structures on Si/SiO2 (285 nm) substrate by the optical lithography method.
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Conclusion & Impact:Besides, unlike the PANI channel FET sensor, it has been determined that PANI/ZnO channel FET sensors operate with an excellent performance at room temperature.
🔬Design:Research Article
📍Scope:Comprehensive Sample
⚙️Variables:Gaz Dedektörleri · FET Sensör Sistemleri · İnce Film H2 Sensörleri

Abstract

In this study, micron-sized Field Effect Transistor (FET) based sensors were produced using Polyaniline (PANI) channels. PANI was synthesized with and without ZnO nanoparticles. FET production was carried out by producing PANI and PANI/ZnO channel structures on Si/SiO2 (285 nm) substrate by the optical lithography method. The electrical responses of the produced sensors against hydrogen (H2) gas were determined by measuring the source-drain current at 25 ˚C, 50 ˚C and 80 ˚C while applying the +20 V gate voltage to the transistors. It has been observed that the sensors which were produced by PANI channel, detect H2 gas but adding ZnO nanocomposite into PANI improves the detection performance. Besides, unlike the PANI channel FET sensor, it has been determined that PANI/ZnO channel FET sensors operate with an excellent performance at room temperature.

Özet

Bu çalışmada, mikron-boyutlu alan etkili transistör sensörler polianilin kanallar kullanılarak üretildi. ZnO nanoparçacık katkılı ve katkısız Polianilin (PANI) sentezlenmiştir. Sentezlenen her iki PANI kullanılarak gaz algılama uygulaması için mikrofabrikasyon yöntemiyle mikron boyutlu, alan etkili transistör (FET) yapıda sensörler üretilmiştir. FET üretimi optik litografi yöntemiyle Si/SiO2 (285 nm) alttaş üzerine PANI ve PANI/ZnO kanal yapıların üretilmesiyle gerçekleştirilmiştir. Üretilen sensörlerin hidrojen (H2) gazına karşı gösterdiği elektriksel tepkiler, 25 ˚C, 50 ˚C ve 80 ˚C sıcaklıkta transistöre +20 V kapı gerilimi uygulanırken, kaynak-akaç akımı değişimleri ölçülerek belirlenmiştir. PANI kanal ile üretilen sensörlerin H2 gazını algıladığı ancak PANI içerisine ZnO nanokompozit katkılamanın algılama performansını iyileştirdiği gözlemlenmiştir. Ayrıca PANI kanallı FET sensörün aksine PANI/ZnO kanallı FET sensörlerin oda sıcaklığında oldukça iyi bir performansla çalıştığı tespit edilmiştir.

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Cite This Article

KARAKUŞ, M. Ö., ÇETİN, H. (2021). Fabrication and Characterization of Polyaniline/ZnO Nanocomposite Field Effect Transistor Based Hydrogen Gas Sensor. Erciyes Üniversitesi Fen Bilimleri Enstitüsü Fen Bilimleri Dergisi, Cilt: 37 - Sayı: 1, 99–109. https://ajindex.com/articles/253031

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