Preliminary results indicated that the charge transport proceeds by different mechanism for low and high values of the applied voltage under forward and reverse bias conditions.
📌 3 Key Takeaways
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Objective & Hypothesis:The temperature dependent current–voltage characteristics of Ag/ZnPc/p-Si Schottky barrier (SB) diode are investigated in the temperature range of 300–450 K, and in the bias range of ± 1 V.
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Key Findings & Data:By fitting the experimental data to space-charge limited conduction, bulk-limited Poole–Frenkel emission and thermo-ionic emission theory, it was observed that these models can not be applied to evaluate junction parameters for the investigated SB diode.
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Conclusion & Impact:Preliminary results indicated that the charge transport proceeds by different mechanism for low and high values of the applied voltage under forward and reverse bias conditions.
🔬Design:Lab & Field Experiment
📍Scope:Comprehensive Sample
⚙️Variables:Schottky diode · transport mechanism
Abstract
The temperature dependent current–voltage characteristics of Ag/ZnPc/p-Si Schottky barrier (SB) diode are investigated in the temperature range of 300–450 K, and in the bias range of ± 1 V. By fitting the experimental data to space-charge limited conduction, bulk-limited Poole–Frenkel emission and thermo-ionic emission theory, it was observed that these models can not be applied to evaluate junction parameters for the investigated SB diode. Preliminary results indicated that the charge transport proceeds by different mechanism for low and high values of the applied voltage under forward and reverse bias conditions. It was found that the charge transport is governed by hopping processes for low values of the forward bias. However, for higher values of the forward bias, the charge transport controlled by the bulk limited procesess. The same voltage dependence was also observed for reverse bias conditions.
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