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Journals / Eskişehir Technical University Journal of Science and Technology A - Applied Sciences and Engineering / 2019 / Cilt: 20 - Sayı: 3

FABRICATION of n-ZnO:Mn/p-Si HETEROJUNCTION DIODES and ITS I-V, C-V CHARACTERISTICS

Seval AKSOY
Pages
296–306
Publication Date
2019-09-26
DOI
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AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

Capacitance-voltage (C-V) measurements of the fabricated diodes are also investigated in detail.

📌 3 Key Takeaways

🎯
Objective & Hypothesis:To investigate the effects of Mn dopant on n-ZnO/p-Si device performance, ZnO films were produced in different Mn dopant by the sol gel spin coating method.
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Key Findings & Data:The values of the diodes were found to be 8.38, 6.84 and 3.87, respectively, for the diodes produced using undoped, 1% Mn doped and 3% Mn doped ZnO films.
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Conclusion & Impact:Capacitance-voltage (C-V) measurements of the fabricated diodes are also investigated in detail.
🔬Design:Research Article
📍Scope:Comprehensive Sample
⚙️Variables:Mn doped ZnO · Sol gel · Heterojunction diode

Abstract

To investigate the effects of Mn dopant on n-ZnO/p-Si device performance, ZnO films were produced in different Mn dopant by the sol gel spin coating method. Morphological properties of the films were studied by emission scanning electron microscopy (FESEM). Then, the n-ZnO:Mn/p-Si heterojunction diodes were fabricated. The diode parameters were determined by current-voltage (I-V) measurements. The values of the diodes were found to be 8.38, 6.84 and 3.87, respectively, for the diodes produced using undoped, 1% Mn doped and 3% Mn doped ZnO films. At the same time, electrical parameters were determined to compare by using Cheung and Norde methods. According to the evaluation of values obtained by different methods, an improvement on the rectifying properties of the ZnO diode with Mn dopant has been observed. In the continuation of the study, the photovoltaic properties of the heterojunction diodes have been studied. The results obtained at different illumination intensities showed that the diodes are sensitive to light. Capacitance-voltage (C-V) measurements of the fabricated diodes are also investigated in detail.

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Cite This Article

AKSOY, S. (2019). FABRICATION of n-ZnO:Mn/p-Si HETEROJUNCTION DIODES and ITS I-V, C-V CHARACTERISTICS. Eskişehir Technical University Journal of Science and Technology A - Applied Sciences and Engineering, Cilt: 20 - Sayı: 3, 296–306. https://ajindex.com/articles/196840

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References (12)

  1. Y.M Hao., S. Y. Lou, S. M. Zhou, R. J. Yuan, G. Y. Zhu, and N. Li, “Structural. optical. and magnetic studies of manganese-doped zinc oxide hierarchical microspheres by self-assembly of nanoparticles,” Nanoscale Res. Lett., vol. 7, no. 100, pp. 1–9, 2012
  2. D. Sivalingam, J. B. Gopalakrishnan, and J. B. B. Rayappan, “Structural, morphological, electrical and vapour sensing properties of Mn doped nanostructured ZnO thin films,” Sensors Actuators, B Chem., vol. 166–167, pp. 624–631, 2012
  3. R. N. Gayen and R. Paul, “Nanocrystalline Zn1-XMnxO thin film based transparent Schottky diodes,” Thin Solid Films, vol. 605, pp. 248–256, 2016
  4. T. M. Hammad, S. Griesing, M. Wotocek, S. Kuhn, R. Hempelmann, U. Hartmann and J. K. Salem “Optical and magnetic properties of Fe-doped ZnO nanoparticles prepared by the sol-gel method,” Int. J. Nanoparticles, vol. 6, no. 4, p. 324, 2013
  5. A. A. M. Farag, M. Cavas, F. Yakuphanoglu, and F. M. Amanullah, “Photoluminescence and optical properties of nanostructure Ni doped ZnO thin films prepared by sol-gel spin coating technique,” J. Alloys Compd., vol. 509, no. 30, pp. 7900–7908, 2011
  6. A. Abdel-Galil, M. R. Balboul, and A. Sharaf, “Synthesis and characterization of Mn-doped ZnO diluted magnetic semiconductors,” Phys. B Condens. Matter, vol. 477, pp. 20–28, 2015
  7. A. Dhara, S. Sain, S. Das, and S. K. Pradhan, “Microstructure, optical, dielectric and electrical characterizations of Mn doped ZnO nanocrystals synthesized by mechanical alloying,” Ceram. Int., vol. 44, no. 6, pp. 7110–7121, 2018
  8. S. A. Ahmed, “Results in Physics Structural, optical, and magnetic properties of Mn-doped ZnO samples,” vol. 7, pp. 604–610, 2017
  9. L. A. Alkhtaby, S. Husain,W. Khan and S.A.H. Naaqvi “Structural and Optical Properties of Mn Doped ZnO Nanoparticles,” vol. 23, no. 12, pp. 5605–5607, 2011
  10. I. Taşçioǧlu, W. A. Farooq, R. Turan, Ş. Altindal, and F. Yakuphanoglu, “Charge transport mechanisms and density of interface traps in MnZnO/p-Si diodes,” J. Alloys Compd., vol. 590, pp. 157–161, 2014
  11. Y. Caglar, K. Gorgun, and S. Aksoy, “Effect of deposition parameters on the structural properties of ZnO nanopowders prepared by microwave-assisted hydrothermal synthesis,” Spectrochim. Acta - Part A Mol. Biomol. Spectrosc., vol. 138, no. December, pp. 617–622, 2015
  12. S. Aksoy and Y. Caglar, “Effect of ambient temperature on electrical properties of nanostructure n-ZnO / p-Si heterojunction diode” Superlattices and Micr