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Journals / Politeknik Dergisi / 2026 / Cilt: 29 Sayı: 4

Investigation of Low Voltage Low Power MOSFET Design Methods

Düşük Gerilim Düşük Güçlü MOSFET Tasarım Yöntemlerinin İncelenmesi

Pelin Doğan Sekreter(GEBZE TEKNİK ÜNİVERSİTESİ)0009-0002-5547-8805
Atilla Uygur(GEBZE TEKNİK ÜNİVERSİTESİ)0000-0001-5220-5188
Mustafa Alçı(Erciyes Üniversitesi)0000-0001-5478-6908
Pages
1–10
Publication Date
2026-04-21
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AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

The developed methods are examined in detail and information about the advantages and disadvantages offered to the circuit structures is also given.

📌 3 Key Takeaways

🎯
Objective & Hypothesis:ABSTRACT Low-power and low-voltage systems are available in a variety of industries, including automotive and portable electronics.
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Key Findings & Data:Therefore, many studies are carried out on this subject.
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Conclusion & Impact:The developed methods are examined in detail and information about the advantages and disadvantages offered to the circuit structures is also given.
🔬Design:Derleme
📍Scope:Comprehensive Sample
⚙️Variables:BD-MOS · FGMOS · QFGMOS

Abstract

ABSTRACT Low-power and low-voltage systems are available in a variety of industries, including automotive and portable electronics. Therefore, many studies are carried out on this subject. MOSFETs are a structure used in analog circuit design due to their high efficiency, fast switching and small size. However, one of the problems encountered is that the threshold voltage is not proportionally low in low voltage low power systems. The methods developed to overcome the threshold voltage problem are examined in this article by making a comprehensive literature study. The developed methods are examined in detail and information about the advantages and disadvantages offered to the circuit structures is also given.

Özet

ÖZ Düşük güçlü ve düşük gerilimli sistemler, taşınabilir elektronik cihazlardan otomotiv sektörüne kadar birçok alanda karşımıza çıkmaktadır. Bu nedenle bu konu üzerinde birçok çalışma yapılmaktadır. MOSFET’lerin, veriminin yüksek, anahtarlama hızının yüksek ve boyutlarının küçük olmasından dolayı analog devre tasarımında kullanılan bir yapıdır. Fakat düşük gerilim düşük güçlü sistemlerde eşik geriliminin oransal olarak düşük olmaması karşılaşılan problemlerden biridir. Eşik gerilimi probleminin üstesinden gelmek amacıyla geliştirilen yöntemler bu çalışmada kapsamlı bir literatür çalışması yapılarak incelenmektedir. Geliştirilen yöntemler detaylı olarak incelenmekte ve devre yapılarına sunduğu avantajlar ve dezavantajlar hakkında bilgiler de verilmektedir.

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Cite This Article

Sekreter, P. D., Uygur, A., Alçı, M. (2026). Investigation of Low Voltage Low Power MOSFET Design Methods. Politeknik Dergisi, Cilt: 29 Sayı: 4, 1–10. https://doi.org/10.2339/politeknik.1338855

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