SavedAdd your journal

Journals / Politeknik Dergisi / 2026 / Cilt: 29 Sayı: 4

The frequency-dependent electrical properties and fabrication of Al/NiO/p-Si Schottky Diode

Al/NiO/p-Si Schottky Diyotun frekansa bağlı elektriksel özellikleri ve fabrikasyonu

Ömer Sevgili(KUTAHYA HEALTH SCIENCES UNIVERSITY)0000-0003-1740-1444
İkram Orak(BİNGÖL ÜNİVERSİTESİ, SAĞLIK HİZMETLERİ MESLEK YÜKSEKOKULU)0000-0003-2318-9718
Sultan Süleyman Özel(BAYBURT ÜNİVERSİTESİ, MERKEZİ ARAŞTIRMA LABORATUVARI UYGULAMA VE ARAŞTIRMA MERKEZİ)0000-0002-3935-9649
Faruk Özel(RECEP TAYYİP ERDOĞAN ÜNİVERSİTESİ, MÜHENDİSLİK VE MİMARLIK FAKÜLTESİ, MAKİNE MÜHENDİSLİĞİ BÖLÜMÜ)0000-0002-3689-0469
Pages
1–7
Publication Date
2026-04-21
🏛️Bibliographic metadata and full text access for this article are provided via DergiPark.
DergiPark Record ↗
✨

AI Summary & Key Takeaways

AI Insight
⚡ TL;DR(Too Long; Didn't Read)

These findings suggest that NiO is a promising alternative to conventional insulating layers in electronic devices.

📌 3 Key Takeaways

🎯
Objective & Hypothesis:The fabrication of Al/NiO/p-Si Schottky diode (SD) was formed using a thermal evaporation system.
📊
Key Findings & Data:The structural analyze of NiO using an interfacial layer was conducted using a Scanning Electron Microscope (SEM) and the SEM cross-section revealed a thickness of 0.0345 µm for NiO interfacial layer.
💡
Conclusion & Impact:These findings suggest that NiO is a promising alternative to conventional insulating layers in electronic devices.
🔬Design:Araştırma Makalesi
📍Scope:Comprehensive Sample
⚙️Variables:NiO · frekansa bağlılık · seri direnç

Abstract

The fabrication of Al/NiO/p-Si Schottky diode (SD) was formed using a thermal evaporation system. The structural analyze of NiO using an interfacial layer was conducted using a Scanning Electron Microscope (SEM) and the SEM cross-section revealed a thickness of 0.0345 µm for NiO interfacial layer. The capacitance-voltage (C-V) and conductance-voltage (G/-V) measurements of the fabricated SD were performed in the 50 kHz to 5 MHz frequency range and in the -3 V to +3 V range. The Nicollian-Brews method was employed to calculate the series resistance (Rs), while the high-low frequency capacitance method (CHF-CLF) was used to calculate the surface states (Nss). The value of the Nss was determined to be in the order of 1012 eV-1cm-2. These findings suggest that NiO is a promising alternative to conventional insulating layers in electronic devices.

Özet

Al/NiO/p-Si Schottky diyot (SD) üretimi bir termal buharlaştırma sistemi kullanılarak oluşturulmuştur. Bir arayüzey tabakası olarak kullanılan NiO’in yapısal analizi Taramalı Elektron Mikroskobu (SEM) kullanılarak gerçekleştirilmiş ve SEM yan kesit görüntüsünden NiO arayüzey tabakasının kalınlığı 0,0345 µm olarak bulunmuştur. Al/NiO/p-Si SD’nin elektriksel özelliklerini frekansa bağlı karakterize etmek amacıyla C-V ve G/-V ölçümleri 50-5000 kHz frekans aralığında ve -3 V ile +3 V aralığında gerçekleştirilmiştir. Seri direnci (Rs) hesaplamak için Nicollian-Brews yöntemi kullanılırken, arayüzey durumlarını (Nss) hesaplamak için yüksek-düşük frekans kapasitans yöntemi (CHF-CLF) kullanılmıştır. Nss değerinin 1012 eV-1cm-2 mertebesinde olduğu belirlenmiştir. Bu bulgular, NiO'nun elektronik cihazlardaki geleneksel yalıtkan katmanlara umut verici bir alternatif olduğunu göstermektedir.

🔖

Cite This Article

Sevgili, Ö., Orak, İ., Özel, S. S., Özel, F. (2026). The frequency-dependent electrical properties and fabrication of Al/NiO/p-Si Schottky Diode. Politeknik Dergisi, Cilt: 29 Sayı: 4, 1–7. https://doi.org/10.2339/politeknik.1626006

📄 Full Text PDF Viewer

📄

PDF görüntüleyici hazırlanıyor...

References (47)

  1. Demirezen S., Çetinkaya H. G., Kara M., Yakuphanoğlu F. ve Altındal Ş., “Synthesis, electrical and photo-sensing characteristics of the Al/(PCBM/NiO: ZnO)/p-Si nanocomposite structures”, Sensors and Actuators A: Physical, 317: 112449, (2021).
  2. Jeong S., Kyhm J., Cha S.-K., Hwang D. K., Ju B.-K., Park J.-S., Kang S. J. ve Han I. K., “High-Speed Colloidal Quantum Dot Photodiodes via Accelerating Charge Separation at Metal–Oxide Interface”, Small, 15: 1900008, (2019).
  3. Çiçek O., Altındal Ş. ve Azizian-Kalandaragh Y., “A highly sensitive temperature sensor based on Au/Graphene-PVP/n-Si type Schottky diodes and the possible conduction mechanisms in the wide range temperatures”, IEEE Sensors Journal, 20: 14081–14089, (2020).
  4. Seven S., Yiğit E., Bayındır S., Akman F., Sevgili Ö., Dayan O. ve Orak İ., “The photodiode performances of NDI-appended ruthenium complexes”, Nano Express, 5: 025002, (2024).
  5. Altındal Ş., Sevgili Ö. ve Azizian-Kalandaragh Y., “The structural and electrical properties of the Au/n-Si (MS) diodes with nanocomposites interlayer (Ag-doped ZnO/PVP) by using the simple ultrasound-assisted method”, IEEE Transactions on Electron Devices, 66: 3103–3109, (2019).
  6. Alarabi A. A., Çiçek O., Makara H., Ünal F., Zurnacı M. ve Altındal Ş., “Comparison of p-n and p-i-n vertical diodes based on p-PMItz/n-Si, p-PMItz/n-4HSiC and p-PMItz/i-SiO2/n-Si heterojunctions”, Journal of Materials Science: Materials in Electronics, 35: 957, (2024).
  7. Hossain E., Sk R., Das M., Goura J., Roy S., Ray P. P., Mir M. H., Frontera A. ve Mukhopadhyay S., “Comparison of electrical conductivity and Schottky behavior of 4-[2-(9-anthryl)vinyl]pyridine based two 1D coordination polymers of Zn(II) and Cd(II)”, European Journal of Inorganic Chemistry, 27: e202300736, (2024).
  8. Torrisi L., Havranek V., Mackova A., Torrisi A. ve Cutroneo M., “SiC and Si detectors comparison for high carbon energy spectrometry”, Journal of Instrumentation, 19: P07005, (2024).
  9. Sevgili Ö., Şafak Asar Y., Altındal Ş., Ulusoy M. ve Azizian-Kalandaragh Y., “On comparison of Au/n-Si (MS) Schottky diodes with and without (Brushite + Monetite: PVC) an interlayer grown by spin coating technique”, Electrical Engineering, (2024).
  10. Genç N. ve Durna Pişkin E., “Grafit katot ve karışık metal oksit kaplı Ti anotların kullanıldığı S2O82-, H2O2 ve O3 ile desteklenen elektro-oksidasyon prosesinin optimizasyonu”, Politeknik Dergisi, 27: 1453–1461, (2024).
  11. Durmuş H., Şenel R., Taştekin R. A., Gül C. ve Çömez N., “Alüminyum alaşımlarına uygulanan alüminyum oksit takviyeli alüminyum/çinko soğuk sprey kaplamaların morfoloji ve aşınma dayanımına etkisi”, Politeknik Dergisi, 1, (2025).
  12. Pepe Y., “NiO kompozit filmlerin geliştirilmiş optik sınırlama davranışı”, Politeknik Dergisi, 28: 979–985, (2025).
  13. Sarcan F., Doğan U., Althumali A., Vasili H. B., Lari L., Kerrigan A., Kuruoğlu F., Lazarov V. K. ve Erol A., “A novel NiO-based p-i-n ultraviolet photodiode”, Journal of Alloys and Compounds, 934: 167806, (2023).
  14. Nagy B., Al-Rawhani M. A., Cheah B. C., Barrett M. P. ve Cumming D. R. S., “Immunoassay multiplexing on a complementary metal oxide semiconductor photodiode array”, ACS Sensors, 3: 953–959, (2018).
  15. Politzer P. ve Weinstein H., “Some relations between electronic distribution and electronegativity”, Journal of Chemical Physics, 71: 4218–4220, (1979).
  16. Hublikar L. V., Ganachari S. V., Shilar F. A. ve Raghavendra N., “Recent advances in transition metal oxide nanomaterials for solar cell applications: A status review and technology perspectives”, Materials Research Bulletin, 187: 113351, (2025).
  17. Taşçıoğlu İ., Soylu M., Altındal Ş., Al-Ghamdi A. A. ve Yakuphanoglu F., “Effects of interface states and series resistance on electrical properties of Al/nanostructure CdO/p-GaAs diode”, Journal of Alloys and Compounds, 541: 462–467, (2012).
  18. Jang B., Kim T., Lee S., Lee W.-Y. ve Jang J., “Schottky nature of Au/SnO2 ultrathin film diode fabricated using sol–gel process”, IEEE Electron Device Letters, 39: 1732–1735, (2018).
  19. Hossain M. A., Zhang T., Zakaria Y., Lambert D., Burr P. A., Rashkeev S. N., Abdallah A. ve Hoex B., “Doped nickel oxide carrier-selective contact for silicon solar cells”, IEEE Journal of Photovoltaics, 11: 1176–1187, (2021).
  20. Liu S., Liu R., Chen Y., Ho S., Kim J. H. ve So F., “Nickel oxide hole injection/transport layers for efficient solution-processed organic light-emitting diodes”, Chemistry of Materials, 26: 4528–4534, (2014).
  21. Park H., Chaurasiya R., Jeong B. H., Sakthivel P. ve Park H. J., “Nickel oxide for perovskite photovoltaic cells”, Advanced Photonics Research, 2: 2000178, (2021).
  22. Marnadu R., Venkatesan S., Alkallas F. H., Ben Gouider Trabelsi A., Shkir M. ve AlFaify S., “Facile synthesis and characterization of metal ions (Ce, Cu, Gd, Mn and Y) doped nickel oxide nanostructures for spintronic and photodiode applications”, Physica Scripta, 97: 095804, (2022).
  23. Narmada A., Ponnusamy K., Mohan L., Subramanian S. ve Raj M. C. J., “Jet nebuliser spray pyrolysed indium oxide and nickel doped indium oxide thin films for photodiode application”, Optik (Stuttgart), 202: 163701, (2020).
  24. Nakagomi S., “Ultraviolet photodetector based on a beta-gallium oxide/nickel oxide/beta-gallium oxide heterojunction structure”, Sensors, 23, (2023).
  25. Cai X., Hu T., Hou H., Zhu P., Liu R., Peng J., Luo W. ve Yu H., “A review for nickel oxide hole transport layer and its application in halide perovskite solar cells”, Materials Today Sustainability, 23: 100438, (2023).
  26. Enns Y., Timoshnev S., Kazakin A., Shubina K., Uvarov A., Vorobyev A., Nikitina E., Mizerov A., Andreeva V., Fedorenko E., Koroleva A. ve Zhizhin E., “Characterization of the p-NiO/n-GaN heterojunction and development of ultraviolet photodiode”, Materials Science in Semiconductor Processing, 181: 108624, (2024).
  27. Gozeh B. A., Karabulut A., Ismael C. B., Saleh S. I. ve Yakuphanoglu F., “Zn-doped CdO effects on the optical, electrical and photoresponse properties of heterojunctions-based photodiodes”, Journal of Alloys and Compounds, 872: 159624, (2021).
  28. Güneş O., Sarılmaz A., Baş S. Z., Özmen M., Özel F. ve Ersöz M., “Electrochemical detection of epinephrine based on a screen-printed electrode modified with NiO–ERGO nanocomposite film”, Electroanalysis, 33: 2460–2468, (2021).
  29. Afandiyeva İ. M., Dökme İ., Altındal Ş., Bülbül M. M. ve Tataroğlu A., “Frequency and voltage effects on the dielectric properties and electrical conductivity of Al–TiW–Pd2Si/n-Si structures”, Microelectronic Engineering, 85: 247–252, (2008).
  30. Moloi S. J. ve Bodunrin J. O., “Characterisation of interface states of Al/p-Si Schottky diode by current–voltage and capacitance–voltage–frequency measurements”, Journal of Materials Science: Materials in Electronics, 34: 1712, (2023).
  31. Gupta R. K., Hendi A. A., Cavas M., Al-Ghamdi A. A., Al-Hartomy O. A., Aloraini R. H., El-Tantawy F. ve Yakuphanoglu F., “Improvement of photoresponse properties of NiO/p-Si photodiodes by copper dopant”, Physica E: Low-Dimensional Systems and Nanostructures, 56: 288–295, (2014).
  32. Nicollian E. H. ve Brews J. R., Metal Oxide Semiconductor (MOS) Physics and Technology, John Wiley & Sons, New York, (1982).
  33. Sze S. M., Physics of Semiconductor Devices, Wiley, New York, (1981).
  34. Sevgili Ö., Orak İ. ve Tıraş K. S., “The examination of the electrical properties of Al/Mg2Si/p-Si Schottky diodes with an ecofriendly interfacial layer depending on temperature and frequency”, Physica E: Low-Dimensional Systems and Nanostructures, 144: 115380, (2022).
  35. Ulusoy M., Altındal Ş., Azizian-Kalandaragh Y., Özçelik S. ve Mirzaei-Kalar Z., “The electrical characteristic of an MIS structure with biocompatible minerals doped (Brushite+Monetite: PVC) interface layer”, Microelectronic Engineering, 258: 111768, (2022).
  36. Manjunath V., Rajagopal Reddy V., Sekhar Reddy P. R., Janardhanam V. ve Choi C. J., “Electrical and frequency-dependent properties of Au/Sm2O3/n-GaN MIS junction with a high-k rare-earth Sm2O3 as interlayer”, Current Applied Physics, 17: 980–988, (2017).
  37. Sevgili Ö., “The investigation of the electrical characteristics and photo-response properties of the Al/(CMAT)/p-Si structures”, Solid State Sciences, 117: 106635, (2021).
  38. Rhoderick E. H. ve Williams R. H., Metal-Semiconductor Contacts, Clarendon Press, Oxford, (1988).
  39. Demirezen S., Sönmez Z., Aydemir U. ve Altındal Ş., “Effect of series resistance and interface states on the I–V, C–V and G/ω–V characteristics in Au/Bi-doped polyvinyl alcohol (PVA)/n-Si Schottky barrier diodes at room temperature”, Current Applied Physics, 12: 266–272, (2012).
  40. Castagné R. ve Vapaille A., “Description of the SiO2–Si interface properties by means of very low frequency MOS capacitance measurements”, Surface Science, 28: 157–193, (1971).
  41. Alptekin S. ve Altındal Ş., “Electrical characteristics of Au/PVP/n-Si structures using admittance measurements between 1 and 500 kHz”, Journal of Materials Science: Materials in Electronics, 31: 13337–13343, (2020).
  42. Çetinkaya H. G., Bengi S., Sevgili Ö. ve Altındal Ş., “The capacitance/conductance and surface state intensity characteristics of the Al/(CMAT)/p-Si structures”, Physica Scripta, 99: 025955, (2024).
  43. Erbilen Tanrıkulu E. ve Taşçıoğlu İ., “Variation of the surface states and series resistance depending on voltage, and their effects on the electrical features of a Schottky structure with CdZnO interface”, Journal of Electronic Materials, 52: 2432–2440, (2023).
  44. Hameed S., Berkün Ö. ve Altındal Yerişkin S., “On the voltage dependent series resistance, interface traps, and conduction mechanisms in the Al/(Ti-doped DLC)/p-Si/Au Schottky barrier diodes (SBDs)”, Gazi University Journal of Science Part A: Engineering and Innovation, 11: 235–244, (2024).
  45. Tataroğlu A., Al-Ghamdi A. A., El-Tantawy F., Farooq W. A. ve Yakuphanoğlu F., “Analysis of interface states of FeO–Al2O3 spinel composite film/p-Si diode by conductance technique”, Applied Physics A, 122: 220, (2016).
  46. Kaya S. ve Yılmaz E., “A comprehensive study on the frequency-dependent electrical characteristics of Sm2O3 MOS capacitors”, IEEE Transactions on Electron Devices, 62: 980–987, (2015).
  47. Çaldıran Z., Taşyürek L. B. ve Nuhoğlu Y., “The effect of different frequencies and illuminations on the electrical behavior of MoO3/Si heterojunctions”, Journal of Materials Science: Materials in Electronics, 32: 27950–27961, (2021).